JPS6137774B2 - - Google Patents

Info

Publication number
JPS6137774B2
JPS6137774B2 JP55101252A JP10125280A JPS6137774B2 JP S6137774 B2 JPS6137774 B2 JP S6137774B2 JP 55101252 A JP55101252 A JP 55101252A JP 10125280 A JP10125280 A JP 10125280A JP S6137774 B2 JPS6137774 B2 JP S6137774B2
Authority
JP
Japan
Prior art keywords
pattern
etching
cms
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55101252A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5727029A (en
Inventor
Tadamasa Ogawa
Minoru Kobayashi
Masatoshi Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10125280A priority Critical patent/JPS5727029A/ja
Publication of JPS5727029A publication Critical patent/JPS5727029A/ja
Publication of JPS6137774B2 publication Critical patent/JPS6137774B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP10125280A 1980-07-25 1980-07-25 Formation of mo pattern Granted JPS5727029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10125280A JPS5727029A (en) 1980-07-25 1980-07-25 Formation of mo pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10125280A JPS5727029A (en) 1980-07-25 1980-07-25 Formation of mo pattern

Publications (2)

Publication Number Publication Date
JPS5727029A JPS5727029A (en) 1982-02-13
JPS6137774B2 true JPS6137774B2 (fr) 1986-08-26

Family

ID=14295717

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10125280A Granted JPS5727029A (en) 1980-07-25 1980-07-25 Formation of mo pattern

Country Status (1)

Country Link
JP (1) JPS5727029A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123373A (ja) * 1983-12-06 1985-07-02 齋藤　武雄 潜熱による加温容器
JPS6299558U (fr) * 1985-12-13 1987-06-25
US4854736A (en) * 1986-07-02 1989-08-08 Mcveigh Martin L Insulated carry bag
JP2537286Y2 (ja) * 1991-08-21 1997-05-28 日野自動車工業株式会社 樹脂製部品の取付け部構造
KR100858297B1 (ko) * 2001-11-02 2008-09-11 삼성전자주식회사 반사-투과형 액정표시장치 및 그 제조 방법

Also Published As

Publication number Publication date
JPS5727029A (en) 1982-02-13

Similar Documents

Publication Publication Date Title
EP0020776B1 (fr) Methode de formation de motifs
JPS6137774B2 (fr)
US3695955A (en) Method of manufacturing an electric device e.g. a semiconductor device
US5024918A (en) Heat activated dry development of photoresist by means of active oxygen atmosphere
JPS6054775B2 (ja) ドライ現像方法
KR940007054B1 (ko) 패턴형성방법
JPS6013432B2 (ja) Ａｌ又はＡｌ合金パタ−ンの形成方法
JP3439488B2 (ja) 半導体装置の製造方法
JPS58132927A (ja) パタ−ン形成方法
JPS58123727A (ja) 半導体装置の製造方法
JPH0219852A (ja) レジスト処理方法
JP2604573B2 (ja) 微細パターン形成方法
JPH0313583B2 (fr)
JP2842909B2 (ja) パターン形成方法
JP2002025935A (ja) 導体部材形成方法、パターン形成方法
JPS63254728A (ja) レジストパタ−ンの形成方法
JPH01137634A (ja) 半導体装置の製造方法
KR100187370B1 (ko) 반도체장치의 패턴형성방법
JPS6040184B2 (ja) 半導体装置の製造方法
JPH06132188A (ja) パタ―ン形成法
JPH03188447A (ja) レジストパターンの形成方法
JPH0629261A (ja) パタ―ン形成法
JPH02295107A (ja) 半導体装置の製造方法
JPS63136631A (ja) パタ−ン形成方法
JPS59177930A (ja) 半導体装置のパタ−ン形成方法