JPS6118280B2 - - Google Patents

Info

Publication number
JPS6118280B2
JPS6118280B2 JP53050313A JP5031378A JPS6118280B2 JP S6118280 B2 JPS6118280 B2 JP S6118280B2 JP 53050313 A JP53050313 A JP 53050313A JP 5031378 A JP5031378 A JP 5031378A JP S6118280 B2 JPS6118280 B2 JP S6118280B2
Authority
JP
Japan
Prior art keywords
mos
transistors
pair
digit line
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53050313A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54141532A (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5031378A priority Critical patent/JPS54141532A/ja
Publication of JPS54141532A publication Critical patent/JPS54141532A/ja
Publication of JPS6118280B2 publication Critical patent/JPS6118280B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP5031378A 1978-04-26 1978-04-26 Mos transistor circuit Granted JPS54141532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5031378A JPS54141532A (en) 1978-04-26 1978-04-26 Mos transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5031378A JPS54141532A (en) 1978-04-26 1978-04-26 Mos transistor circuit

Publications (2)

Publication Number Publication Date
JPS54141532A JPS54141532A (en) 1979-11-02
JPS6118280B2 true JPS6118280B2 (enrdf_load_stackoverflow) 1986-05-12

Family

ID=12855394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5031378A Granted JPS54141532A (en) 1978-04-26 1978-04-26 Mos transistor circuit

Country Status (1)

Country Link
JP (1) JPS54141532A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5782279A (en) * 1980-11-04 1982-05-22 Fujitsu Ltd Semiconductor storage device
JPS63113999A (ja) * 1986-10-31 1988-05-18 Mitsubishi Electric Corp ダイナミツクランダムアクセスメモリ
JPS63197093A (ja) * 1987-02-12 1988-08-15 Mitsubishi Electric Corp ダイナミツク・ランダム・アクセス・メモリ

Also Published As

Publication number Publication date
JPS54141532A (en) 1979-11-02

Similar Documents

Publication Publication Date Title
JPS6032911B2 (ja) 半導体記憶装置
JPS5986098U (ja) ダイナミック平衡型センス・アンプを含むメモリ
JPH04119597A (ja) 不揮発性半導体記憶装置のセンスアンプ
JPH07107798B2 (ja) ダイナミックランダムアクセスメモリにおけるセンスアンプ駆動装置およびセンスアンプ駆動方法
JPS60239993A (ja) ダイナミツク型半導体記憶装置
JP3188608B2 (ja) Dram内のアクセストランジスタを介してチャージ転送を検知するセンス回路
TW487912B (en) Ferroelectric memory device
JPS61158095A (ja) ダイナミツク型メモリのビツト線プリチヤ−ジ回路
JPS6118280B2 (enrdf_load_stackoverflow)
JPS592118B2 (ja) 増巾回路
JP2003257181A (ja) 半導体装置
JPH0453040B2 (enrdf_load_stackoverflow)
JPS58128090A (ja) ダイナミツクicメモリ
JPS6149760B2 (enrdf_load_stackoverflow)
JPS60258793A (ja) ダイナミック型半導体記憶装置
JPH0510756B2 (enrdf_load_stackoverflow)
JPH0690875B2 (ja) 半導体記憶回路
JPH11195300A (ja) 不揮発性半導体記憶装置
JPS6048073B2 (ja) メモリ回路
JPH0159680B2 (enrdf_load_stackoverflow)
JPS63308790A (ja) 半導体記憶装置
JPH0249508B2 (enrdf_load_stackoverflow)
JPS5939836B2 (ja) 記憶集積回路
JPS61180996A (ja) ダイナミツクmosメモリ装置
JPS6236310B2 (enrdf_load_stackoverflow)