JPS6115588B2 - - Google Patents

Info

Publication number
JPS6115588B2
JPS6115588B2 JP54125904A JP12590479A JPS6115588B2 JP S6115588 B2 JPS6115588 B2 JP S6115588B2 JP 54125904 A JP54125904 A JP 54125904A JP 12590479 A JP12590479 A JP 12590479A JP S6115588 B2 JPS6115588 B2 JP S6115588B2
Authority
JP
Japan
Prior art keywords
region
overflow
control gate
gate region
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54125904A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5649577A (en
Inventor
Hiroyuki Matsumoto
Yasuo Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12590479A priority Critical patent/JPS5649577A/ja
Publication of JPS5649577A publication Critical patent/JPS5649577A/ja
Publication of JPS6115588B2 publication Critical patent/JPS6115588B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP12590479A 1979-09-28 1979-09-28 Preparation of solid image pickup element Granted JPS5649577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12590479A JPS5649577A (en) 1979-09-28 1979-09-28 Preparation of solid image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12590479A JPS5649577A (en) 1979-09-28 1979-09-28 Preparation of solid image pickup element

Publications (2)

Publication Number Publication Date
JPS5649577A JPS5649577A (en) 1981-05-06
JPS6115588B2 true JPS6115588B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-04-24

Family

ID=14921778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12590479A Granted JPS5649577A (en) 1979-09-28 1979-09-28 Preparation of solid image pickup element

Country Status (1)

Country Link
JP (1) JPS5649577A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4362575A (en) * 1981-08-27 1982-12-07 Rca Corporation Method of making buried channel charge coupled device with means for controlling excess charge
US4940411A (en) * 1988-08-25 1990-07-10 American Dental Laser, Inc. Dental laser method
EP3182455B1 (en) * 2008-12-10 2019-09-04 Semiconductor Components Industries, LLC Image sensors with lateral overflow drains
US8329499B2 (en) 2008-12-10 2012-12-11 Truesense Imaging, Inc. Method of forming lateral overflow drain and channel stop regions in image sensors

Also Published As

Publication number Publication date
JPS5649577A (en) 1981-05-06

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