JPS61136954A - 焼結性に優れた酸化インジウム系焼結体 - Google Patents
焼結性に優れた酸化インジウム系焼結体Info
- Publication number
- JPS61136954A JPS61136954A JP59256566A JP25656684A JPS61136954A JP S61136954 A JPS61136954 A JP S61136954A JP 59256566 A JP59256566 A JP 59256566A JP 25656684 A JP25656684 A JP 25656684A JP S61136954 A JPS61136954 A JP S61136954A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- indium oxide
- film
- mol
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims description 32
- 229910003437 indium oxide Inorganic materials 0.000 title claims description 27
- 239000007858 starting material Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000000470 constituent Substances 0.000 claims description 9
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 34
- 239000012298 atmosphere Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005534 GaO2 Inorganic materials 0.000 description 1
- 206010017577 Gait disturbance Diseases 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256566A JPS61136954A (ja) | 1984-12-06 | 1984-12-06 | 焼結性に優れた酸化インジウム系焼結体 |
| JP62016146A JPS62202415A (ja) | 1984-12-06 | 1987-01-28 | 酸化インジウム系透明導電膜の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256566A JPS61136954A (ja) | 1984-12-06 | 1984-12-06 | 焼結性に優れた酸化インジウム系焼結体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61136954A true JPS61136954A (ja) | 1986-06-24 |
| JPH0121109B2 JPH0121109B2 (enrdf_load_stackoverflow) | 1989-04-19 |
Family
ID=17294417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59256566A Granted JPS61136954A (ja) | 1984-12-06 | 1984-12-06 | 焼結性に優れた酸化インジウム系焼結体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61136954A (enrdf_load_stackoverflow) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62202415A (ja) * | 1984-12-06 | 1987-09-07 | 三井金属鉱業株式会社 | 酸化インジウム系透明導電膜の製造法 |
| JPS6389656A (ja) * | 1986-10-01 | 1988-04-20 | Agency Of Ind Science & Technol | 透明導電膜及びその生成方法 |
| JPS6410507A (en) * | 1987-07-02 | 1989-01-13 | Optrex Kk | Transparent conductive film and its manufacture |
| WO1995018080A1 (fr) * | 1993-12-28 | 1995-07-06 | Showa Denko Kabushiki Kaisha | Corps fritte a l'oxyde d'etain dope a l'indium, couche mince conductrice transparente d'oxyde d'etain dope a l'indium et son procede de formation |
| JP2002069610A (ja) * | 2000-08-30 | 2002-03-08 | Toshiba Corp | スパッタリングターゲットとそれを用いたスパッタリング装置 |
| JP2003055049A (ja) * | 2001-08-22 | 2003-02-26 | Sumitomo Metal Mining Co Ltd | 酸化インジウム焼結体、その製造方法及びそれを用いたスパッタリングターゲット |
| JP2007055841A (ja) * | 2005-08-24 | 2007-03-08 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体及びその製造方法、酸化物焼結体を用いて得られる非晶質酸化物膜、並びにその非晶質酸化物膜を含む積層体 |
| JP4823386B2 (ja) * | 2008-09-25 | 2011-11-24 | Ｊｘ日鉱日石金属株式会社 | 透明導電膜製造用の酸化物焼結体 |
| JP2015042773A (ja) * | 2013-08-26 | 2015-03-05 | 住友金属鉱山株式会社 | 蒸着用タブレット及びその製造方法、並びに酸化物膜 |
| CN113548872A (zh) * | 2021-07-16 | 2021-10-26 | 长沙壹纳光电材料有限公司 | 一种iwo靶材及其制备方法与应用 |
-
1984
- 1984-12-06 JP JP59256566A patent/JPS61136954A/ja active Granted
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62202415A (ja) * | 1984-12-06 | 1987-09-07 | 三井金属鉱業株式会社 | 酸化インジウム系透明導電膜の製造法 |
| JPS6389656A (ja) * | 1986-10-01 | 1988-04-20 | Agency Of Ind Science & Technol | 透明導電膜及びその生成方法 |
| JPS6410507A (en) * | 1987-07-02 | 1989-01-13 | Optrex Kk | Transparent conductive film and its manufacture |
| WO1995018080A1 (fr) * | 1993-12-28 | 1995-07-06 | Showa Denko Kabushiki Kaisha | Corps fritte a l'oxyde d'etain dope a l'indium, couche mince conductrice transparente d'oxyde d'etain dope a l'indium et son procede de formation |
| JP2002069610A (ja) * | 2000-08-30 | 2002-03-08 | Toshiba Corp | スパッタリングターゲットとそれを用いたスパッタリング装置 |
| JP2003055049A (ja) * | 2001-08-22 | 2003-02-26 | Sumitomo Metal Mining Co Ltd | 酸化インジウム焼結体、その製造方法及びそれを用いたスパッタリングターゲット |
| JP2007055841A (ja) * | 2005-08-24 | 2007-03-08 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体及びその製造方法、酸化物焼結体を用いて得られる非晶質酸化物膜、並びにその非晶質酸化物膜を含む積層体 |
| JP4823386B2 (ja) * | 2008-09-25 | 2011-11-24 | Ｊｘ日鉱日石金属株式会社 | 透明導電膜製造用の酸化物焼結体 |
| JP2015042773A (ja) * | 2013-08-26 | 2015-03-05 | 住友金属鉱山株式会社 | 蒸着用タブレット及びその製造方法、並びに酸化物膜 |
| CN113548872A (zh) * | 2021-07-16 | 2021-10-26 | 长沙壹纳光电材料有限公司 | 一种iwo靶材及其制备方法与应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0121109B2 (enrdf_load_stackoverflow) | 1989-04-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2004091265A (ja) | 酸化物焼結体 | |
| JPS62122011A (ja) | 透明導電膜の製造方法 | |
| JPS61136954A (ja) | 焼結性に優れた酸化インジウム系焼結体 | |
| JP2011184715A (ja) | 酸化亜鉛系透明導電膜形成材料、その製造方法、それを用いたターゲット、および酸化亜鉛系透明導電膜の形成方法 | |
| JP4018839B2 (ja) | ＳｎＯ２系焼結体、薄膜形成用材料および導電膜 | |
| JP3163015B2 (ja) | 透明導電膜 | |
| JPH06290641A (ja) | 非晶質透明導電膜 | |
| JPS62154411A (ja) | 透明導電膜 | |
| JP2007113048A (ja) | 半導体薄膜及びその製造方法 | |
| JPS62202415A (ja) | 酸化インジウム系透明導電膜の製造法 | |
| JPH0784654B2 (ja) | Ｉｔｏ透明導電膜用スパッタリングターゲットの製造方法 | |
| CN112313359A (zh) | 复合钨氧化物膜及其制造方法以及具有该膜的膜形成基材和物品 | |
| JPH0987833A (ja) | 透明導電膜の製造方法 | |
| JPH07196365A (ja) | Ｉｔｏ焼結体ならびにｉｔｏ透明電導膜およびその膜の形成方法 | |
| JP2017160105A (ja) | Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法 | |
| JP2002075062A (ja) | 透明導電膜 | |
| JPH0315107A (ja) | 導電性金属酸化物焼結体及びその用途 | |
| JPH06248427A (ja) | 真空蒸着用原料 | |
| JP2002075061A (ja) | 透明導電膜 | |
| JPH04293769A (ja) | 低温成膜用ｉｔｏスパッタリングタ−ゲット | |
| WO2021019854A1 (ja) | 蒸着用タブレットと酸化物透明導電膜および酸化錫系焼結体の製造方法 | |
| JP3004518B2 (ja) | スパッタリングターゲットとその製造方法 | |
| JP3079724B2 (ja) | 高密度ｉｔｏ焼結体の製造方法 | |
| JP7428753B2 (ja) | 透明導電膜としての機能を有する積層体及びその製造方法並びに当該積層体製造用の酸化物スパッタリングターゲット | |
| JP3134405B2 (ja) | 酸化インジウム・酸化スズ焼結体の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |