JPS61128553A - 入力保護回路 - Google Patents

入力保護回路

Info

Publication number
JPS61128553A
JPS61128553A JP59250739A JP25073984A JPS61128553A JP S61128553 A JPS61128553 A JP S61128553A JP 59250739 A JP59250739 A JP 59250739A JP 25073984 A JP25073984 A JP 25073984A JP S61128553 A JPS61128553 A JP S61128553A
Authority
JP
Japan
Prior art keywords
wiring
polysilicon
fet
diffusion layer
protection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59250739A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0314233B2 (enExample
Inventor
Hiroshi Miyamoto
博司 宮本
Kiichi Morooka
諸岡　毅一
Isato Ikeda
勇人 池田
Kazutami Arimoto
和民 有本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59250739A priority Critical patent/JPS61128553A/ja
Publication of JPS61128553A publication Critical patent/JPS61128553A/ja
Publication of JPH0314233B2 publication Critical patent/JPH0314233B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59250739A 1984-11-27 1984-11-27 入力保護回路 Granted JPS61128553A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59250739A JPS61128553A (ja) 1984-11-27 1984-11-27 入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59250739A JPS61128553A (ja) 1984-11-27 1984-11-27 入力保護回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3351704A Division JPH06103740B2 (ja) 1991-12-11 1991-12-11 入力保護回路

Publications (2)

Publication Number Publication Date
JPS61128553A true JPS61128553A (ja) 1986-06-16
JPH0314233B2 JPH0314233B2 (enExample) 1991-02-26

Family

ID=17212317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59250739A Granted JPS61128553A (ja) 1984-11-27 1984-11-27 入力保護回路

Country Status (1)

Country Link
JP (1) JPS61128553A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02312277A (ja) * 1989-05-26 1990-12-27 Fujitsu Ltd 半導体入力保護装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101483271B1 (ko) * 2008-06-27 2015-01-15 삼성전자주식회사 음원 위치 추정에 있어 대표 점 선정 방법 및 그 방법을이용한 음원 위치 추정 시스템

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS54116887A (en) * 1978-03-02 1979-09-11 Nec Corp Mos type semiconductor device
JPS5586159A (en) * 1978-12-22 1980-06-28 Fujitsu Ltd Protective circuit for mos semiconductor device
JPS57180167A (en) * 1981-04-28 1982-11-06 Siemens Ag Thyristor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPS54116887A (en) * 1978-03-02 1979-09-11 Nec Corp Mos type semiconductor device
JPS5586159A (en) * 1978-12-22 1980-06-28 Fujitsu Ltd Protective circuit for mos semiconductor device
JPS57180167A (en) * 1981-04-28 1982-11-06 Siemens Ag Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02312277A (ja) * 1989-05-26 1990-12-27 Fujitsu Ltd 半導体入力保護装置

Also Published As

Publication number Publication date
JPH0314233B2 (enExample) 1991-02-26

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