JPS61107746A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61107746A
JPS61107746A JP22918084A JP22918084A JPS61107746A JP S61107746 A JPS61107746 A JP S61107746A JP 22918084 A JP22918084 A JP 22918084A JP 22918084 A JP22918084 A JP 22918084A JP S61107746 A JPS61107746 A JP S61107746A
Authority
JP
Japan
Prior art keywords
spacer layer
wiring
layer
insulating film
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22918084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530068B2 (ko
Inventor
Yu Watanabe
祐 渡邊
Koichiro Kotani
小谷　紘一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP22918084A priority Critical patent/JPS61107746A/ja
Publication of JPS61107746A publication Critical patent/JPS61107746A/ja
Publication of JPH0530068B2 publication Critical patent/JPH0530068B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP22918084A 1984-10-31 1984-10-31 半導体装置の製造方法 Granted JPS61107746A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22918084A JPS61107746A (ja) 1984-10-31 1984-10-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22918084A JPS61107746A (ja) 1984-10-31 1984-10-31 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61107746A true JPS61107746A (ja) 1986-05-26
JPH0530068B2 JPH0530068B2 (ko) 1993-05-07

Family

ID=16888047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22918084A Granted JPS61107746A (ja) 1984-10-31 1984-10-31 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61107746A (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63120457A (ja) * 1986-11-08 1988-05-24 Mitsubishi Electric Corp 半導体装置
JPH01196145A (ja) * 1988-01-30 1989-08-07 Sony Corp 配線形成方法
EP0872887A3 (en) * 1997-04-18 1999-05-12 NEC Corporation Multilevel interconnection structure having an air gap between interconnects
US6333255B1 (en) 1997-08-21 2001-12-25 Matsushita Electronics Corporation Method for making semiconductor device containing low carbon film for interconnect structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834686A (ko) * 1971-09-09 1973-05-21
JPS57114254A (en) * 1981-01-07 1982-07-16 Nec Corp Semiconductor device and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834686A (ko) * 1971-09-09 1973-05-21
JPS57114254A (en) * 1981-01-07 1982-07-16 Nec Corp Semiconductor device and manufacture thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63120457A (ja) * 1986-11-08 1988-05-24 Mitsubishi Electric Corp 半導体装置
JPH01196145A (ja) * 1988-01-30 1989-08-07 Sony Corp 配線形成方法
EP0872887A3 (en) * 1997-04-18 1999-05-12 NEC Corporation Multilevel interconnection structure having an air gap between interconnects
US6064118A (en) * 1997-04-18 2000-05-16 Nec Corporation Multilevel interconnection structure having an air gap between interconnects
US6368939B1 (en) * 1997-04-18 2002-04-09 Nec Corporation Multilevel interconnection structure having an air gap between interconnects
US6333255B1 (en) 1997-08-21 2001-12-25 Matsushita Electronics Corporation Method for making semiconductor device containing low carbon film for interconnect structures
US6534868B2 (en) 1997-08-21 2003-03-18 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
JPH0530068B2 (ko) 1993-05-07

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