JPS6029627A - 半導体圧力センサ - Google Patents
半導体圧力センサInfo
- Publication number
- JPS6029627A JPS6029627A JP58136955A JP13695583A JPS6029627A JP S6029627 A JPS6029627 A JP S6029627A JP 58136955 A JP58136955 A JP 58136955A JP 13695583 A JP13695583 A JP 13695583A JP S6029627 A JPS6029627 A JP S6029627A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure sensor
- semiconductor pressure
- damage
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 7
- 230000007017 scission Effects 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 235000009508 confectionery Nutrition 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58136955A JPS6029627A (ja) | 1983-07-27 | 1983-07-27 | 半導体圧力センサ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58136955A JPS6029627A (ja) | 1983-07-27 | 1983-07-27 | 半導体圧力センサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6029627A true JPS6029627A (ja) | 1985-02-15 |
| JPH0426051B2 JPH0426051B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-05-06 |
Family
ID=15187408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58136955A Granted JPS6029627A (ja) | 1983-07-27 | 1983-07-27 | 半導体圧力センサ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6029627A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05118936A (ja) * | 1991-10-25 | 1993-05-14 | Yamatake Honeywell Co Ltd | 薄膜ダイアフラム |
| WO2011010571A1 (ja) | 2009-07-24 | 2011-01-27 | ローム株式会社 | 半導体圧力センサ、圧力センサ装置、電子機器、および半導体圧力センサの製造方法 |
| JP2015108581A (ja) * | 2013-12-05 | 2015-06-11 | 株式会社デンソー | 圧力センサ |
| CN114295276A (zh) * | 2020-10-08 | 2022-04-08 | 阿自倍尔株式会社 | 压力测定装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114690A (en) * | 1977-03-17 | 1978-10-06 | Yokogawa Hokushin Electric Corp | Thin film strain gauge convertor |
| JPS57197872A (en) * | 1981-05-29 | 1982-12-04 | Toshiba Corp | Semiconductor pressure detecting element |
-
1983
- 1983-07-27 JP JP58136955A patent/JPS6029627A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53114690A (en) * | 1977-03-17 | 1978-10-06 | Yokogawa Hokushin Electric Corp | Thin film strain gauge convertor |
| JPS57197872A (en) * | 1981-05-29 | 1982-12-04 | Toshiba Corp | Semiconductor pressure detecting element |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05118936A (ja) * | 1991-10-25 | 1993-05-14 | Yamatake Honeywell Co Ltd | 薄膜ダイアフラム |
| WO2011010571A1 (ja) | 2009-07-24 | 2011-01-27 | ローム株式会社 | 半導体圧力センサ、圧力センサ装置、電子機器、および半導体圧力センサの製造方法 |
| US8770035B2 (en) | 2009-07-24 | 2014-07-08 | Rohm Co., Ltd. | Semiconductor pressure sensor, pressure sensor apparatus, electronic equipment, and method of manufacturing semiconductor pressure sensor |
| US9568385B2 (en) | 2009-07-24 | 2017-02-14 | Rohm Co., Ltd. | Semiconductor pressure sensor, pressure sensor apparatus, electronic equipment, and method of manufacturing semiconductor pressure sensor |
| JP2015108581A (ja) * | 2013-12-05 | 2015-06-11 | 株式会社デンソー | 圧力センサ |
| CN114295276A (zh) * | 2020-10-08 | 2022-04-08 | 阿自倍尔株式会社 | 压力测定装置 |
| CN114295276B (zh) * | 2020-10-08 | 2025-01-24 | 阿自倍尔株式会社 | 压力测定装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0426051B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3456226A (en) | Strain gage configuration | |
| JP4438193B2 (ja) | 圧力センサ | |
| US5291788A (en) | Semiconductor pressure sensor | |
| JP2804874B2 (ja) | 半導体加速度検出装置 | |
| US5412993A (en) | Pressure detection gage for semiconductor pressure sensor | |
| KR920007827B1 (ko) | 모노리식 압력검지 ic 및 그 제조공정 | |
| JP4045979B2 (ja) | 圧力検出装置 | |
| JPS6029627A (ja) | 半導体圧力センサ | |
| JP4379993B2 (ja) | 圧力センサ | |
| JP2895262B2 (ja) | 複合センサ | |
| JPH0577304B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| US5708207A (en) | Semiconductor acceleration sensor | |
| JPH0337503A (ja) | 歪ゲージ | |
| US6938501B2 (en) | Semiconductor dynamic quantity sensor | |
| JPH08248060A (ja) | 半導体加速度検出装置 | |
| JPH02205077A (ja) | 力覚センサ | |
| JPH09181191A (ja) | 差動対トランジスタを有する回路装置 | |
| JPH02116174A (ja) | 半導体圧力センサ | |
| JP4019876B2 (ja) | 力検知素子 | |
| JP3120388B2 (ja) | 半導体圧力変換器 | |
| JPH0337537A (ja) | 圧力センサ | |
| JP3509336B2 (ja) | 集積化センサ | |
| JP2980440B2 (ja) | 半導体圧力センサおよびその製造方法 | |
| JPH04113239A (ja) | 複合機能形センサ | |
| JP2573540Y2 (ja) | 半導体圧力センサ |