JPS57197872A - Semiconductor pressure detecting element - Google Patents

Semiconductor pressure detecting element

Info

Publication number
JPS57197872A
JPS57197872A JP8087181A JP8087181A JPS57197872A JP S57197872 A JPS57197872 A JP S57197872A JP 8087181 A JP8087181 A JP 8087181A JP 8087181 A JP8087181 A JP 8087181A JP S57197872 A JPS57197872 A JP S57197872A
Authority
JP
Japan
Prior art keywords
section
detecting element
pressure receiving
semiconductor pressure
receiving diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8087181A
Other languages
Japanese (ja)
Inventor
Tadahiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8087181A priority Critical patent/JPS57197872A/en
Publication of JPS57197872A publication Critical patent/JPS57197872A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Abstract

PURPOSE:To enable the check of the abnormality of dielectric resistance, and to improve reliability by arranging a diffusion resistor for detecting fracture at the maximum stress generating position of the pressure receiving diaphragm section of the semiconductor pressure detecting element. CONSTITUTION:A plurality of strain gate resistors 4 having a reverse conduction type to a Si single crystal substrate 1 and metallic electrodes 7 for external connection are formed to the surface at the reverse side to the concave section of the substrate 1 with the pressure receiving diaphragm section consisting of a thin section, to one surface of a disk thereof the concentrical concave section is shaped, while the diffusion resistor 20 for detecting fracture is molded at the maximum stress generating position of the pressure receiving diaphragm section. Accordingly, the abnormality of dielectric resistance is easily checked, and the semiconductor pressure detecting element having high reliability and safety can be obtained.
JP8087181A 1981-05-29 1981-05-29 Semiconductor pressure detecting element Pending JPS57197872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8087181A JPS57197872A (en) 1981-05-29 1981-05-29 Semiconductor pressure detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8087181A JPS57197872A (en) 1981-05-29 1981-05-29 Semiconductor pressure detecting element

Publications (1)

Publication Number Publication Date
JPS57197872A true JPS57197872A (en) 1982-12-04

Family

ID=13730399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8087181A Pending JPS57197872A (en) 1981-05-29 1981-05-29 Semiconductor pressure detecting element

Country Status (1)

Country Link
JP (1) JPS57197872A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029627A (en) * 1983-07-27 1985-02-15 Toshiba Corp Semiconductor pressure sensor
WO1996022515A1 (en) * 1995-01-19 1996-07-25 Honeywell Inc. Apparatus for detection of a diaphragm rupture in a pressure sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595373A (en) * 1979-01-11 1980-07-19 Nissan Motor Co Ltd Semiconductor pressure sensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595373A (en) * 1979-01-11 1980-07-19 Nissan Motor Co Ltd Semiconductor pressure sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029627A (en) * 1983-07-27 1985-02-15 Toshiba Corp Semiconductor pressure sensor
JPH0426051B2 (en) * 1983-07-27 1992-05-06 Tokyo Shibaura Electric Co
WO1996022515A1 (en) * 1995-01-19 1996-07-25 Honeywell Inc. Apparatus for detection of a diaphragm rupture in a pressure sensor

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