JPS6017943A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6017943A
JPS6017943A JP58125309A JP12530983A JPS6017943A JP S6017943 A JPS6017943 A JP S6017943A JP 58125309 A JP58125309 A JP 58125309A JP 12530983 A JP12530983 A JP 12530983A JP S6017943 A JPS6017943 A JP S6017943A
Authority
JP
Japan
Prior art keywords
type
transistor
manufacturing
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58125309A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0345548B2 (enrdf_load_stackoverflow
Inventor
Kazuo Sato
和夫 佐藤
Takeshi Kimura
武司 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP58125309A priority Critical patent/JPS6017943A/ja
Publication of JPS6017943A publication Critical patent/JPS6017943A/ja
Publication of JPH0345548B2 publication Critical patent/JPH0345548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58125309A 1983-07-08 1983-07-08 半導体装置の製造方法 Granted JPS6017943A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58125309A JPS6017943A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58125309A JPS6017943A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6017943A true JPS6017943A (ja) 1985-01-29
JPH0345548B2 JPH0345548B2 (enrdf_load_stackoverflow) 1991-07-11

Family

ID=14906910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58125309A Granted JPS6017943A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6017943A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292358A (ja) * 1985-10-17 1987-04-27 Nec Corp 半導体装置
JPS63216370A (ja) * 1987-03-05 1988-09-08 Toshiba Corp 半導体装置
JPH01133356A (ja) * 1987-11-18 1989-05-25 Fuji Electric Co Ltd ＢｉＭＯＳ半導体回路装置の製造方法
US4855245A (en) * 1985-09-13 1989-08-08 Siemens Aktiengesellschaft Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate
US5086006A (en) * 1984-12-11 1992-02-04 Seiko Epson Corporation Semiconductor device and method of production
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420679A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Bipolar mos semiconductor integrated circuit device and the same
JPS55165669A (en) * 1979-06-11 1980-12-24 Hitachi Ltd Bipolar-mos device
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420679A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Bipolar mos semiconductor integrated circuit device and the same
JPS55165669A (en) * 1979-06-11 1980-12-24 Hitachi Ltd Bipolar-mos device
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086006A (en) * 1984-12-11 1992-02-04 Seiko Epson Corporation Semiconductor device and method of production
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production
US4855245A (en) * 1985-09-13 1989-08-08 Siemens Aktiengesellschaft Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate
JPS6292358A (ja) * 1985-10-17 1987-04-27 Nec Corp 半導体装置
JPS63216370A (ja) * 1987-03-05 1988-09-08 Toshiba Corp 半導体装置
JPH01133356A (ja) * 1987-11-18 1989-05-25 Fuji Electric Co Ltd ＢｉＭＯＳ半導体回路装置の製造方法

Also Published As

Publication number Publication date
JPH0345548B2 (enrdf_load_stackoverflow) 1991-07-11

Similar Documents

Publication Publication Date Title
JPS59119762A (ja) 埋込シヨツトキ−クランプ型トランジスタ
JPS6017943A (ja) 半導体装置の製造方法
JPH065706B2 (ja) ＢｉＣＭＯＳ素子の製造方法
JP2596117B2 (ja) 半導体集積回路の製造方法
KR910000020B1 (ko) 반도체장치의 제조방법
JP3307481B2 (ja) 半導体装置
JPS6244862B2 (enrdf_load_stackoverflow)
JP3097095B2 (ja) 半導体装置の製造方法
JPH10172981A (ja) 半導体装置及びその製造方法
JPS6123665B2 (enrdf_load_stackoverflow)
US5792678A (en) Method for fabricating a semiconductor on insulator device
JPH01238058A (ja) 高速バイポーラトランジスタの製造方法
JPS628939B2 (enrdf_load_stackoverflow)
JP2820284B2 (ja) 半導体装置の製造方法
GB2117969A (en) Method of fabricating semiconductor integrated circuit devices
JPH0226061A (ja) 半導体集積回路の製造方法
JPS62141765A (ja) 半導体装置の製造方法
JP2915040B2 (ja) 半導体装置の製造方法
JP3052347B2 (ja) 半導体装置及びその製造方法
JPS59189667A (ja) 半導体装置の製造方法
JPS59134868A (ja) 半導体装置の製造方法
JPH0352223B2 (enrdf_load_stackoverflow)
JPS60127756A (ja) 相補型電界効果半導体装置
JPS60182149A (ja) 半導体集積回路の製造方法
JPH0212965A (ja) 半導体装置