JPS6244862B2 - - Google Patents
Info
- Publication number
- JPS6244862B2 JPS6244862B2 JP57060545A JP6054582A JPS6244862B2 JP S6244862 B2 JPS6244862 B2 JP S6244862B2 JP 57060545 A JP57060545 A JP 57060545A JP 6054582 A JP6054582 A JP 6054582A JP S6244862 B2 JPS6244862 B2 JP S6244862B2
- Authority
- JP
- Japan
- Prior art keywords
- island
- semiconductor material
- material layer
- oxidizable
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
Landscapes
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57060545A JPS58176964A (ja) | 1982-04-12 | 1982-04-12 | 相補型ｍｏｓ半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57060545A JPS58176964A (ja) | 1982-04-12 | 1982-04-12 | 相補型ｍｏｓ半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176964A JPS58176964A (ja) | 1983-10-17 |
| JPS6244862B2 true JPS6244862B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=13145359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57060545A Granted JPS58176964A (ja) | 1982-04-12 | 1982-04-12 | 相補型ｍｏｓ半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176964A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113662A (ja) * | 1984-06-28 | 1986-01-21 | Nippon Telegr & Teleph Corp <Ntt> | 相補形ｍｉｓトランジスタ装置及びその製法 |
| JPS63117460A (ja) * | 1986-11-05 | 1988-05-21 | Nec Corp | 半導体集積回路装置の製造方法 |
| JP2812388B2 (ja) * | 1988-01-18 | 1998-10-22 | 富士通株式会社 | Ｓｏｉ半導体装置の製造方法 |
| JP4803866B2 (ja) * | 2000-07-31 | 2011-10-26 | ローム株式会社 | 半導体装置 |
-
1982
- 1982-04-12 JP JP57060545A patent/JPS58176964A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58176964A (ja) | 1983-10-17 |