JPH0352223B2 - - Google Patents
Info
- Publication number
- JPH0352223B2 JPH0352223B2 JP58157008A JP15700883A JPH0352223B2 JP H0352223 B2 JPH0352223 B2 JP H0352223B2 JP 58157008 A JP58157008 A JP 58157008A JP 15700883 A JP15700883 A JP 15700883A JP H0352223 B2 JPH0352223 B2 JP H0352223B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- film
- formation area
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58157008A JPS6049646A (ja) | 1983-08-26 | 1983-08-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58157008A JPS6049646A (ja) | 1983-08-26 | 1983-08-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6049646A JPS6049646A (ja) | 1985-03-18 |
| JPH0352223B2 true JPH0352223B2 (enrdf_load_stackoverflow) | 1991-08-09 |
Family
ID=15640160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58157008A Granted JPS6049646A (ja) | 1983-08-26 | 1983-08-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6049646A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3110313B2 (ja) * | 1996-06-20 | 2000-11-20 | 日本電気株式会社 | 半導体装置の製造方法 |
-
1983
- 1983-08-26 JP JP58157008A patent/JPS6049646A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6049646A (ja) | 1985-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH058583B2 (enrdf_load_stackoverflow) | ||
| JPH04226022A (ja) | 半導体構成体におけるスペーサの形成 | |
| JPH0555484A (ja) | 半導体装置の製造方法 | |
| JPH0348457A (ja) | 半導体装置およびその製造方法 | |
| JP2509690B2 (ja) | 半導体装置 | |
| JPH065706B2 (ja) | ＢｉＣＭＯＳ素子の製造方法 | |
| JP2596117B2 (ja) | 半導体集積回路の製造方法 | |
| JPS6360549B2 (enrdf_load_stackoverflow) | ||
| JPH0628294B2 (ja) | ｂｉ−ＣＭＯＳ半導体装置の製造方法 | |
| JPH07142419A (ja) | 半導体装置の製造方法 | |
| JPH02101747A (ja) | 半導体集積回路とその製造方法 | |
| JPH0345548B2 (enrdf_load_stackoverflow) | ||
| JPH05110003A (ja) | 半導体集積回路装置およびその製造方法 | |
| JPH0352223B2 (enrdf_load_stackoverflow) | ||
| JP3097095B2 (ja) | 半導体装置の製造方法 | |
| JP2633559B2 (ja) | バイポーラ―ｃｍｏｓ半導体装置の製造方法 | |
| JPS6143858B2 (enrdf_load_stackoverflow) | ||
| JPH02237024A (ja) | 半導体装置及びその製造方法 | |
| JP2969846B2 (ja) | ＢｉＣＭＯＳ集積回路装置の製造方法 | |
| JPS61251165A (ja) | Ｂｉ−ＭＩＳ集積回路の製造方法 | |
| JPS61139057A (ja) | 半導体集積回路装置の製造方法 | |
| JPH0481336B2 (enrdf_load_stackoverflow) | ||
| JP2616809B2 (ja) | 半導体装置 | |
| JPS63144567A (ja) | 半導体装置の製造方法 | |
| JPH04346263A (ja) | Ｂｉ−ＣＭＯＳ半導体装置の製造方法 |