JPH0352223B2 - - Google Patents

Info

Publication number
JPH0352223B2
JPH0352223B2 JP15700883A JP15700883A JPH0352223B2 JP H0352223 B2 JPH0352223 B2 JP H0352223B2 JP 15700883 A JP15700883 A JP 15700883A JP 15700883 A JP15700883 A JP 15700883A JP H0352223 B2 JPH0352223 B2 JP H0352223B2
Authority
JP
Japan
Prior art keywords
gate electrode
film
formation area
substrate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15700883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6049646A (ja
Inventor
Osamu Hataishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15700883A priority Critical patent/JPS6049646A/ja
Publication of JPS6049646A publication Critical patent/JPS6049646A/ja
Publication of JPH0352223B2 publication Critical patent/JPH0352223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
JP15700883A 1983-08-26 1983-08-26 半導体装置の製造方法 Granted JPS6049646A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15700883A JPS6049646A (ja) 1983-08-26 1983-08-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15700883A JPS6049646A (ja) 1983-08-26 1983-08-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6049646A JPS6049646A (ja) 1985-03-18
JPH0352223B2 true JPH0352223B2 (enrdf_load_stackoverflow) 1991-08-09

Family

ID=15640160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15700883A Granted JPS6049646A (ja) 1983-08-26 1983-08-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6049646A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3110313B2 (ja) * 1996-06-20 2000-11-20 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6049646A (ja) 1985-03-18

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