JPH0345548B2 - - Google Patents

Info

Publication number
JPH0345548B2
JPH0345548B2 JP58125309A JP12530983A JPH0345548B2 JP H0345548 B2 JPH0345548 B2 JP H0345548B2 JP 58125309 A JP58125309 A JP 58125309A JP 12530983 A JP12530983 A JP 12530983A JP H0345548 B2 JPH0345548 B2 JP H0345548B2
Authority
JP
Japan
Prior art keywords
bipolar transistor
film
transistor
type
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58125309A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6017943A (ja
Inventor
Kazuo Sato
Takeshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP58125309A priority Critical patent/JPS6017943A/ja
Publication of JPS6017943A publication Critical patent/JPS6017943A/ja
Publication of JPH0345548B2 publication Critical patent/JPH0345548B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58125309A 1983-07-08 1983-07-08 半導体装置の製造方法 Granted JPS6017943A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58125309A JPS6017943A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58125309A JPS6017943A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6017943A JPS6017943A (ja) 1985-01-29
JPH0345548B2 true JPH0345548B2 (enrdf_load_stackoverflow) 1991-07-11

Family

ID=14906910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58125309A Granted JPS6017943A (ja) 1983-07-08 1983-07-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6017943A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production
JPS61139058A (ja) * 1984-12-11 1986-06-26 Seiko Epson Corp 半導体製造装置
DE3676781D1 (de) * 1985-09-13 1991-02-14 Siemens Ag Integrierte bipolar- und komplementaere mos-transistoren auf einem gemeinsamen substrat enthaltende schaltung und verfahren zu ihrer herstellung.
JP2578757B2 (ja) * 1985-10-17 1997-02-05 日本電気株式会社 半導体装置
JPS63216370A (ja) * 1987-03-05 1988-09-08 Toshiba Corp 半導体装置
JP2610906B2 (ja) * 1987-11-18 1997-05-14 富士電機株式会社 ＢｉＭＯＳ半導体回路装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5420679A (en) * 1977-07-18 1979-02-16 Hitachi Ltd Bipolar mos semiconductor integrated circuit device and the same
JPS55165669A (en) * 1979-06-11 1980-12-24 Hitachi Ltd Bipolar-mos device
JPS5768075A (en) * 1980-10-16 1982-04-26 Nippon Gakki Seizo Kk Manufacture of integrated circuit device

Also Published As

Publication number Publication date
JPS6017943A (ja) 1985-01-29

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