JPS6049646A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6049646A
JPS6049646A JP58157008A JP15700883A JPS6049646A JP S6049646 A JPS6049646 A JP S6049646A JP 58157008 A JP58157008 A JP 58157008A JP 15700883 A JP15700883 A JP 15700883A JP S6049646 A JPS6049646 A JP S6049646A
Authority
JP
Japan
Prior art keywords
film
substrate
formation area
transistor formation
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58157008A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0352223B2 (enrdf_load_stackoverflow
Inventor
Osamu Hataishi
畑石　治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58157008A priority Critical patent/JPS6049646A/ja
Publication of JPS6049646A publication Critical patent/JPS6049646A/ja
Publication of JPH0352223B2 publication Critical patent/JPH0352223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
JP58157008A 1983-08-26 1983-08-26 半導体装置の製造方法 Granted JPS6049646A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58157008A JPS6049646A (ja) 1983-08-26 1983-08-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58157008A JPS6049646A (ja) 1983-08-26 1983-08-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6049646A true JPS6049646A (ja) 1985-03-18
JPH0352223B2 JPH0352223B2 (enrdf_load_stackoverflow) 1991-08-09

Family

ID=15640160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58157008A Granted JPS6049646A (ja) 1983-08-26 1983-08-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6049646A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904519A (en) * 1996-06-20 1999-05-18 Nec Corporation Method of manufacturing Bi-CMOS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904519A (en) * 1996-06-20 1999-05-18 Nec Corporation Method of manufacturing Bi-CMOS

Also Published As

Publication number Publication date
JPH0352223B2 (enrdf_load_stackoverflow) 1991-08-09

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