JPS60138974A - 絶縁ゲ−ト型電界効果トランジスタの製造方法 - Google Patents

絶縁ゲ−ト型電界効果トランジスタの製造方法

Info

Publication number
JPS60138974A
JPS60138974A JP58247135A JP24713583A JPS60138974A JP S60138974 A JPS60138974 A JP S60138974A JP 58247135 A JP58247135 A JP 58247135A JP 24713583 A JP24713583 A JP 24713583A JP S60138974 A JPS60138974 A JP S60138974A
Authority
JP
Japan
Prior art keywords
manufacturing
effect transistor
field effect
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58247135A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558257B2 (enExample
Inventor
Akinori Shimizu
了典 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP58247135A priority Critical patent/JPS60138974A/ja
Publication of JPS60138974A publication Critical patent/JPS60138974A/ja
Publication of JPH0558257B2 publication Critical patent/JPH0558257B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP58247135A 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法 Granted JPS60138974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58247135A JPS60138974A (ja) 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58247135A JPS60138974A (ja) 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60138974A true JPS60138974A (ja) 1985-07-23
JPH0558257B2 JPH0558257B2 (enExample) 1993-08-26

Family

ID=17158950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58247135A Granted JPS60138974A (ja) 1983-12-27 1983-12-27 絶縁ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60138974A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358823A (ja) * 1986-08-29 1988-03-14 Toshiba Corp 半導体装置の製造方法
JPS63166220A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体装置の製造方法
JPS6445118A (en) * 1987-08-13 1989-02-17 Fuji Electric Co Ltd Solid-phase diffusion of boron
JPS6464315A (en) * 1987-09-04 1989-03-10 Toshiba Corp Manufacture of semiconductor integrated circuit
JPH02132823A (ja) * 1987-12-30 1990-05-22 Fujitsu Ltd 浅い接合を形成する方法及びその浅い接合を有する半導体装置
US5183777A (en) * 1987-12-30 1993-02-02 Fujitsu Limited Method of forming shallow junctions
US8051835B2 (en) 2006-11-10 2011-11-08 Toyota Jidosha Kabushiki Kaisha Internal combustion engine and internal combustion engine control method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5555469B2 (ja) * 2009-10-05 2014-07-23 東京応化工業株式会社 拡散剤組成物、および不純物拡散層の形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137481A (enExample) * 1974-04-18 1975-10-31
JPS5642336A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Manufacturing method of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50137481A (enExample) * 1974-04-18 1975-10-31
JPS5642336A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Manufacturing method of semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358823A (ja) * 1986-08-29 1988-03-14 Toshiba Corp 半導体装置の製造方法
JPS63166220A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体装置の製造方法
JPS6445118A (en) * 1987-08-13 1989-02-17 Fuji Electric Co Ltd Solid-phase diffusion of boron
JPS6464315A (en) * 1987-09-04 1989-03-10 Toshiba Corp Manufacture of semiconductor integrated circuit
JPH02132823A (ja) * 1987-12-30 1990-05-22 Fujitsu Ltd 浅い接合を形成する方法及びその浅い接合を有する半導体装置
US5183777A (en) * 1987-12-30 1993-02-02 Fujitsu Limited Method of forming shallow junctions
US8051835B2 (en) 2006-11-10 2011-11-08 Toyota Jidosha Kabushiki Kaisha Internal combustion engine and internal combustion engine control method

Also Published As

Publication number Publication date
JPH0558257B2 (enExample) 1993-08-26

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