JPS5642336A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS5642336A
JPS5642336A JP11826179A JP11826179A JPS5642336A JP S5642336 A JPS5642336 A JP S5642336A JP 11826179 A JP11826179 A JP 11826179A JP 11826179 A JP11826179 A JP 11826179A JP S5642336 A JPS5642336 A JP S5642336A
Authority
JP
Japan
Prior art keywords
layer
psg
cvd method
npcl3
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11826179A
Other languages
Japanese (ja)
Other versions
JPS626647B2 (en
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11826179A priority Critical patent/JPS5642336A/en
Publication of JPS5642336A publication Critical patent/JPS5642336A/en
Publication of JPS626647B2 publication Critical patent/JPS626647B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To perform an uniform diffusion by a method wherein a thin film contained P is formed on a semiconductor substrate by a CVD method using phosphazene, polyalkoxy or polyaminophosphazene. CONSTITUTION:An opening is made in an oxidized film on a P type Si substrate to enter in a reaction vat, and a P2O5 layer 4 is made from H2O and NPCl3 by plasma CVD method. Next thereto, a PSG layer 5 is made by plasma CVD method using NPCl3, SiH4 and O2. When an opening 3 is made in the PSG layer and a heat treatment is made, P2O5 layer becomes a diffusion source and an N-layer 6 is formed, the P2O5 layer 4 and the PSG layer 5 unite in one body and the PSG layer 5 containing a great deal of P is produced. A P2O5 layer 4' is removed a aqueous solution of HF. In the method, since NPCl2 does not decompose in the vapor phase, the P2O5 layer with the same film thickness and density distribution can be formed, and since the uniform diffusion can be performed, the characteristic of the semiconductor element can be unified.
JP11826179A 1979-09-14 1979-09-14 Manufacturing method of semiconductor device Granted JPS5642336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11826179A JPS5642336A (en) 1979-09-14 1979-09-14 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11826179A JPS5642336A (en) 1979-09-14 1979-09-14 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642336A true JPS5642336A (en) 1981-04-20
JPS626647B2 JPS626647B2 (en) 1987-02-12

Family

ID=14732240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11826179A Granted JPS5642336A (en) 1979-09-14 1979-09-14 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642336A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021321A (en) * 1983-07-12 1985-02-02 Toray Eng Co Ltd Heating or cooling method of metallic object by fluidized bed furnace
JPS60138974A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacture of insulated gate type field effect transistor
JPS629627A (en) * 1985-07-06 1987-01-17 Sony Corp Manufacture of semiconductor device
JPS6214472A (en) * 1985-07-12 1987-01-23 Sony Corp Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021321A (en) * 1983-07-12 1985-02-02 Toray Eng Co Ltd Heating or cooling method of metallic object by fluidized bed furnace
JPS60138974A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacture of insulated gate type field effect transistor
JPH0558257B2 (en) * 1983-12-27 1993-08-26 Fuji Denki Sogo Kenkyusho Kk
JPS629627A (en) * 1985-07-06 1987-01-17 Sony Corp Manufacture of semiconductor device
JPS6214472A (en) * 1985-07-12 1987-01-23 Sony Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS626647B2 (en) 1987-02-12

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