JPS60117764A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60117764A
JPS60117764A JP58225818A JP22581883A JPS60117764A JP S60117764 A JPS60117764 A JP S60117764A JP 58225818 A JP58225818 A JP 58225818A JP 22581883 A JP22581883 A JP 22581883A JP S60117764 A JPS60117764 A JP S60117764A
Authority
JP
Japan
Prior art keywords
type
oxide film
film
layer
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58225818A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228267B2 (enrdf_load_stackoverflow
Inventor
Hidetaro Watanabe
渡辺　秀太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58225818A priority Critical patent/JPS60117764A/ja
Publication of JPS60117764A publication Critical patent/JPS60117764A/ja
Publication of JPH0228267B2 publication Critical patent/JPH0228267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58225818A 1983-11-30 1983-11-30 半導体装置の製造方法 Granted JPS60117764A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58225818A JPS60117764A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58225818A JPS60117764A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60117764A true JPS60117764A (ja) 1985-06-25
JPH0228267B2 JPH0228267B2 (enrdf_load_stackoverflow) 1990-06-22

Family

ID=16835276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58225818A Granted JPS60117764A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60117764A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165167A (ja) * 1987-12-22 1989-06-29 Mitsubishi Electric Corp 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52156455U (enrdf_load_stackoverflow) * 1977-05-12 1977-11-28
JPS5476677U (enrdf_load_stackoverflow) * 1977-11-11 1979-05-31

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52156455U (enrdf_load_stackoverflow) * 1977-05-12 1977-11-28
JPS5476677U (enrdf_load_stackoverflow) * 1977-11-11 1979-05-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165167A (ja) * 1987-12-22 1989-06-29 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
JPH0228267B2 (enrdf_load_stackoverflow) 1990-06-22

Similar Documents

Publication Publication Date Title
US4507171A (en) Method for contacting a narrow width PN junction region
JP3132101B2 (ja) 半導体装置の製造方法
JPH09115921A (ja) 半導体装置及びその製造方法
US4712125A (en) Structure for contacting a narrow width PN junction region
JPS6252963A (ja) バイポ−ラトランジスタの製造方法
US3953255A (en) Fabrication of matched complementary transistors in integrated circuits
JP2654607B2 (ja) 半導体装置の製造方法
JPS59108325A (ja) 半導体装置の製造方法
JPS60117764A (ja) 半導体装置の製造方法
JPS5828731B2 (ja) ゼツエンキバンジヨウヘノ シリコンソウサクセイホウホウ
JPS61172346A (ja) 半導体集積回路装置
KR0152546B1 (ko) 바이폴라 트랜지스터 및 그의 제조방법
JPH0629304A (ja) 半導体装置およびその製造方法
JPS59217363A (ja) バイポ−ラ型半導体装置の製造方法
JPS63144567A (ja) 半導体装置の製造方法
JPH04280423A (ja) 半導体装置の製造方法
JPH034539A (ja) 半導体装置及びその製造方法
JPH03203333A (ja) 半導体装置及びその製法
JPS62214637A (ja) 半導体装置とその製造方法
JPH01152667A (ja) 半導体装置の製造方法
JPH0240921A (ja) バイポーラトランジスタの製造方法
JPS63107165A (ja) 半導体装置とその製造法
JPH027438A (ja) 半導体装置の製造方法
JPS60207374A (ja) バイポ−ラトランジスタ及びその製造方法
JPS628536A (ja) 電子装置とその製造方法