JPH0228267B2 - - Google Patents
Info
- Publication number
- JPH0228267B2 JPH0228267B2 JP58225818A JP22581883A JPH0228267B2 JP H0228267 B2 JPH0228267 B2 JP H0228267B2 JP 58225818 A JP58225818 A JP 58225818A JP 22581883 A JP22581883 A JP 22581883A JP H0228267 B2 JPH0228267 B2 JP H0228267B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- type
- silicon oxide
- silicon
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
- H10D88/01—Manufacture or treatment
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58225818A JPS60117764A (ja) | 1983-11-30 | 1983-11-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58225818A JPS60117764A (ja) | 1983-11-30 | 1983-11-30 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60117764A JPS60117764A (ja) | 1985-06-25 |
JPH0228267B2 true JPH0228267B2 (enrdf_load_stackoverflow) | 1990-06-22 |
Family
ID=16835276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58225818A Granted JPS60117764A (ja) | 1983-11-30 | 1983-11-30 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60117764A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01165167A (ja) * | 1987-12-22 | 1989-06-29 | Mitsubishi Electric Corp | 半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352392Y2 (enrdf_load_stackoverflow) * | 1977-05-12 | 1978-12-14 | ||
JPS5476677U (enrdf_load_stackoverflow) * | 1977-11-11 | 1979-05-31 |
-
1983
- 1983-11-30 JP JP58225818A patent/JPS60117764A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60117764A (ja) | 1985-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4504332A (en) | Method of making a bipolar transistor | |
US4892837A (en) | Method for manufacturing semiconductor integrated circuit device | |
US4236294A (en) | High performance bipolar device and method for making same | |
US4279671A (en) | Method for manufacturing a semiconductor device utilizing dopant predeposition and polycrystalline deposition | |
US5198692A (en) | Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions | |
US5763931A (en) | Semiconductor device with SOI structure and fabrication method thereof | |
JPH0831478B2 (ja) | バイポーラ・トランジスタおよびその製造方法 | |
JPH0228267B2 (enrdf_load_stackoverflow) | ||
JPS59108325A (ja) | 半導体装置の製造方法 | |
JPH0547913A (ja) | 半導体装置の製造方法 | |
JPS6095969A (ja) | 半導体集積回路の製造方法 | |
JP2663632B2 (ja) | 半導体装置及びその製造方法 | |
JPS6155775B2 (enrdf_load_stackoverflow) | ||
JPS6140057A (ja) | 半導体装置及びその製造方法 | |
KR0152546B1 (ko) | 바이폴라 트랜지스터 및 그의 제조방법 | |
JPH0666275B2 (ja) | 半導体装置の製造方法 | |
JPH03203333A (ja) | 半導体装置及びその製法 | |
JPH027438A (ja) | 半導体装置の製造方法 | |
JPH0128508B2 (enrdf_load_stackoverflow) | ||
JP2524079B2 (ja) | 上向構造型バイポ―ラトランジスタ及びその製造方法 | |
JPS60207374A (ja) | バイポ−ラトランジスタ及びその製造方法 | |
JPH0621077A (ja) | 半導体装置およびその製造方法 | |
JPS6154256B2 (enrdf_load_stackoverflow) | ||
JPS61150211A (ja) | 半導体装置の製造方法 | |
JPS628536A (ja) | 電子装置とその製造方法 |