JPH0228267B2 - - Google Patents

Info

Publication number
JPH0228267B2
JPH0228267B2 JP58225818A JP22581883A JPH0228267B2 JP H0228267 B2 JPH0228267 B2 JP H0228267B2 JP 58225818 A JP58225818 A JP 58225818A JP 22581883 A JP22581883 A JP 22581883A JP H0228267 B2 JPH0228267 B2 JP H0228267B2
Authority
JP
Japan
Prior art keywords
oxide film
type
silicon oxide
silicon
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58225818A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60117764A (ja
Inventor
Hidetaro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58225818A priority Critical patent/JPS60117764A/ja
Publication of JPS60117764A publication Critical patent/JPS60117764A/ja
Publication of JPH0228267B2 publication Critical patent/JPH0228267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • H10D88/01Manufacture or treatment

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58225818A 1983-11-30 1983-11-30 半導体装置の製造方法 Granted JPS60117764A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58225818A JPS60117764A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58225818A JPS60117764A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60117764A JPS60117764A (ja) 1985-06-25
JPH0228267B2 true JPH0228267B2 (enrdf_load_stackoverflow) 1990-06-22

Family

ID=16835276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58225818A Granted JPS60117764A (ja) 1983-11-30 1983-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60117764A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165167A (ja) * 1987-12-22 1989-06-29 Mitsubishi Electric Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352392Y2 (enrdf_load_stackoverflow) * 1977-05-12 1978-12-14
JPS5476677U (enrdf_load_stackoverflow) * 1977-11-11 1979-05-31

Also Published As

Publication number Publication date
JPS60117764A (ja) 1985-06-25

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