JPS59191374A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS59191374A
JPS59191374A JP58065433A JP6543383A JPS59191374A JP S59191374 A JPS59191374 A JP S59191374A JP 58065433 A JP58065433 A JP 58065433A JP 6543383 A JP6543383 A JP 6543383A JP S59191374 A JPS59191374 A JP S59191374A
Authority
JP
Japan
Prior art keywords
insulating film
semiconductor
integrated circuit
capacitor
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58065433A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0576785B2 (enrdf_load_stackoverflow
Inventor
Hisao Katsuto
甲藤　久郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58065433A priority Critical patent/JPS59191374A/ja
Publication of JPS59191374A publication Critical patent/JPS59191374A/ja
Publication of JPH0576785B2 publication Critical patent/JPH0576785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP58065433A 1983-04-15 1983-04-15 半導体集積回路装置 Granted JPS59191374A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58065433A JPS59191374A (ja) 1983-04-15 1983-04-15 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58065433A JPS59191374A (ja) 1983-04-15 1983-04-15 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS59191374A true JPS59191374A (ja) 1984-10-30
JPH0576785B2 JPH0576785B2 (enrdf_load_stackoverflow) 1993-10-25

Family

ID=13286966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58065433A Granted JPS59191374A (ja) 1983-04-15 1983-04-15 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS59191374A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212055A (ja) * 1985-03-18 1986-09-20 Oki Electric Ind Co Ltd 半導体記憶装置
JPS6281752A (ja) * 1985-10-07 1987-04-15 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
US4786954A (en) * 1984-04-19 1988-11-22 Nippon Telegraph & Telephone Public Corporation Dynamic ram cell with trench surrounded switching element
US4797719A (en) * 1985-04-03 1989-01-10 Matsushita Electronics Corporation MOS capacitor with direct polycrystalline contact to grooved substrate
US4803535A (en) * 1986-03-03 1989-02-07 Fujitus Limited Dynamic random access memory trench capacitor
US5073515A (en) * 1989-09-29 1991-12-17 Siemens Aktiengesellschaft Method for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrode
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JPH0595091A (ja) * 1990-06-22 1993-04-16 Ramtron Corp 集積回路メモリ用トレンチキヤパシタ及びこれを用いたメモリセルの形成方法
US5237528A (en) * 1982-11-04 1993-08-17 Hitachi, Ltd. Semiconductor memory
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121480A (en) * 1977-02-03 1978-10-23 Texas Instruments Inc Mos memory cell and method of producing same
JPS583260A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタ
JPS58213460A (ja) * 1982-06-07 1983-12-12 Nec Corp 半導体集積回路装置
JPS59141262A (ja) * 1983-02-02 1984-08-13 Nec Corp 半導体メモリセル

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121480A (en) * 1977-02-03 1978-10-23 Texas Instruments Inc Mos memory cell and method of producing same
JPS583260A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd 竪型埋め込みキヤパシタ
JPS58213460A (ja) * 1982-06-07 1983-12-12 Nec Corp 半導体集積回路装置
JPS59141262A (ja) * 1983-02-02 1984-08-13 Nec Corp 半導体メモリセル

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237528A (en) * 1982-11-04 1993-08-17 Hitachi, Ltd. Semiconductor memory
US4786954A (en) * 1984-04-19 1988-11-22 Nippon Telegraph & Telephone Public Corporation Dynamic ram cell with trench surrounded switching element
JPS61212055A (ja) * 1985-03-18 1986-09-20 Oki Electric Ind Co Ltd 半導体記憶装置
US4797719A (en) * 1985-04-03 1989-01-10 Matsushita Electronics Corporation MOS capacitor with direct polycrystalline contact to grooved substrate
JPS6281752A (ja) * 1985-10-07 1987-04-15 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
US4803535A (en) * 1986-03-03 1989-02-07 Fujitus Limited Dynamic random access memory trench capacitor
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device
US5073515A (en) * 1989-09-29 1991-12-17 Siemens Aktiengesellschaft Method for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrode
JPH0595091A (ja) * 1990-06-22 1993-04-16 Ramtron Corp 集積回路メモリ用トレンチキヤパシタ及びこれを用いたメモリセルの形成方法

Also Published As

Publication number Publication date
JPH0576785B2 (enrdf_load_stackoverflow) 1993-10-25

Similar Documents

Publication Publication Date Title
KR920007331B1 (ko) 반도체 기억장치 및 그 제조방법
US4633438A (en) Stacked semiconductor memory
US4649406A (en) Semiconductor memory device having stacked capacitor-type memory cells
US5032882A (en) Semiconductor device having trench type structure
EP0112670B1 (en) Semiconductor memory device having stacked capacitor-tape memory cells
EP0145606B1 (en) Semiconductor memory device
JPS5982761A (ja) 半導体メモリ
US4735915A (en) Method of manufacturing a semiconductor random access memory element
JP2818964B2 (ja) 積層構造の電荷蓄積部を有する半導体記憶装置の製造方法
JP2621181B2 (ja) Ｍｉｓ型半導体記憶装置
JPS59191374A (ja) 半導体集積回路装置
JPS6155258B2 (enrdf_load_stackoverflow)
JPH0640573B2 (ja) 半導体集積回路装置
JP2676168B2 (ja) 半導体装置
JP2574231B2 (ja) 半導体メモリ装置
JPS60136366A (ja) 半導体集積回路装置
JPH077823B2 (ja) 半導体集積回路装置
JPS62193275A (ja) ３次元１トランジスタ・セル装置およびその製造方法
JPS6167955A (ja) 半導体記憶装置とその製造方法
JPS61199657A (ja) 半導体記憶装置
JP2554332B2 (ja) １トランジスタ型ダイナミツクメモリセル
JPH0529571A (ja) 半導体記憶装置およびその製造方法
JPS61140171A (ja) 半導体記憶装置
JPH0691216B2 (ja) 半導体記憶装置
JPH0321103B2 (enrdf_load_stackoverflow)