JPS59191374A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS59191374A
JPS59191374A JP6543383A JP6543383A JPS59191374A JP S59191374 A JPS59191374 A JP S59191374A JP 6543383 A JP6543383 A JP 6543383A JP 6543383 A JP6543383 A JP 6543383A JP S59191374 A JPS59191374 A JP S59191374A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
capacitance
plate
insulating film
section
isolates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6543383A
Other versions
JPH0576785B2 (en )
Inventor
Hisao Katsuto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
    • H01L27/10829Dynamic random access memory structures with one-transistor one-capacitor memory cells the capacitor being in a substrate trench

Abstract

PURPOSE:To prevent a leakage phenomenon by forming a charge storage section into a small hole electrically isolated from a semiconductor substrate and removing an unnecessary depletion region from a capacitance section in the capacitance section of a memory cell. CONSTITUTION:Small holes 3 are formed on a p type semiconductor substrate 1, and the capacitance sections C1, C2 of memory cells are constituted. An insulating film 6 electrically isolates the semiconductor substrate 1 and a first capacitance plate 9. A capacitance insulating film 8 is positioned at the intermediate section of the first capacitance plate 9 and a second capacitance plate 12, and stores information charges. An insulating film 10 isolates both the first capacitance plate 9 and the substrate 1 and the second capacitance plate 12. A connecting hole 11 connects the plate 12 and a semiconductor region. An insulating film 14 isolates the capacitance sections of adjacent memory cells and the plate 12 and word lines 15. n<+> semiconductor regions 16 constitute a MISFETQ1. Insulating films 17 isolate the word lines 15 and a bit line 19. A connecting hole 18 connects the semiconductor region 16 and the bit line 19.
JP6543383A 1983-04-15 1983-04-15 Expired - Lifetime JPH0576785B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6543383A JPH0576785B2 (en) 1983-04-15 1983-04-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6543383A JPH0576785B2 (en) 1983-04-15 1983-04-15

Publications (2)

Publication Number Publication Date
JPS59191374A true true JPS59191374A (en) 1984-10-30
JPH0576785B2 JPH0576785B2 (en) 1993-10-25

Family

ID=13286966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6543383A Expired - Lifetime JPH0576785B2 (en) 1983-04-15 1983-04-15

Country Status (1)

Country Link
JP (1) JPH0576785B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61212055A (en) * 1985-03-18 1986-09-20 Oki Electric Ind Co Ltd Semiconductor memory device
JPS6281752A (en) * 1985-10-07 1987-04-15 Oki Electric Ind Co Ltd Semiconductor memory device
US4786954A (en) * 1984-04-19 1988-11-22 Nippon Telegraph & Telephone Public Corporation Dynamic ram cell with trench surrounded switching element
US4797719A (en) * 1985-04-03 1989-01-10 Matsushita Electronics Corporation MOS capacitor with direct polycrystalline contact to grooved substrate
US4803535A (en) * 1986-03-03 1989-02-07 Fujitus Limited Dynamic random access memory trench capacitor
US5073515A (en) * 1989-09-29 1991-12-17 Siemens Aktiengesellschaft Method for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrode
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JPH0595091A (en) * 1990-06-22 1993-04-16 Nmb Semiconductor:Kk Trench capacitor for integrated circuit memory and formation of memory cell using it
US5237528A (en) * 1982-11-04 1993-08-17 Hitachi, Ltd. Semiconductor memory
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121480A (en) * 1977-02-03 1978-10-23 Texas Instruments Inc Mos memory cell and method of producing same
JPS583260A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Vertical type buried capacitor
JPS58213460A (en) * 1982-06-07 1983-12-12 Nec Corp Semiconductor integrated circuit device
JPS59141262A (en) * 1983-02-02 1984-08-13 Nec Corp Semiconductor memory cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121480A (en) * 1977-02-03 1978-10-23 Texas Instruments Inc Mos memory cell and method of producing same
JPS583260A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Vertical type buried capacitor
JPS58213460A (en) * 1982-06-07 1983-12-12 Nec Corp Semiconductor integrated circuit device
JPS59141262A (en) * 1983-02-02 1984-08-13 Nec Corp Semiconductor memory cell

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237528A (en) * 1982-11-04 1993-08-17 Hitachi, Ltd. Semiconductor memory
US4786954A (en) * 1984-04-19 1988-11-22 Nippon Telegraph & Telephone Public Corporation Dynamic ram cell with trench surrounded switching element
JPS61212055A (en) * 1985-03-18 1986-09-20 Oki Electric Ind Co Ltd Semiconductor memory device
US4797719A (en) * 1985-04-03 1989-01-10 Matsushita Electronics Corporation MOS capacitor with direct polycrystalline contact to grooved substrate
JPS6281752A (en) * 1985-10-07 1987-04-15 Oki Electric Ind Co Ltd Semiconductor memory device
US4803535A (en) * 1986-03-03 1989-02-07 Fujitus Limited Dynamic random access memory trench capacitor
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device
US5073515A (en) * 1989-09-29 1991-12-17 Siemens Aktiengesellschaft Method for manufacturing a trench capacitor of a one-transistor memory cell in a semiconductor substrate with a self-aligned capacitor plate electrode
JPH0595091A (en) * 1990-06-22 1993-04-16 Nmb Semiconductor:Kk Trench capacitor for integrated circuit memory and formation of memory cell using it

Also Published As

Publication number Publication date Type
JPH0576785B2 (en) 1993-10-25 grant

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