JPS59161060A - 半導体デバイスの製造方法 - Google Patents

半導体デバイスの製造方法

Info

Publication number
JPS59161060A
JPS59161060A JP58240777A JP24077783A JPS59161060A JP S59161060 A JPS59161060 A JP S59161060A JP 58240777 A JP58240777 A JP 58240777A JP 24077783 A JP24077783 A JP 24077783A JP S59161060 A JPS59161060 A JP S59161060A
Authority
JP
Japan
Prior art keywords
layer
silicon
exposed
silicon oxide
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58240777A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510827B2 (cg-RX-API-DMAC10.html
Inventor
デイ−パツク・メ−ロトラ
ジエラルド・ジエイ・シヨ−
ジヨク・イン・ゴ−
ラジヤニ・カント
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of JPS59161060A publication Critical patent/JPS59161060A/ja
Publication of JPH0510827B2 publication Critical patent/JPH0510827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/01—
    • H10D64/0113—
    • H10P76/40—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58240777A 1982-12-20 1983-12-20 半導体デバイスの製造方法 Granted JPS59161060A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/450,900 US4512076A (en) 1982-12-20 1982-12-20 Semiconductor device fabrication process
US450900 1982-12-20

Publications (2)

Publication Number Publication Date
JPS59161060A true JPS59161060A (ja) 1984-09-11
JPH0510827B2 JPH0510827B2 (cg-RX-API-DMAC10.html) 1993-02-10

Family

ID=23789980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58240777A Granted JPS59161060A (ja) 1982-12-20 1983-12-20 半導体デバイスの製造方法

Country Status (2)

Country Link
US (1) US4512076A (cg-RX-API-DMAC10.html)
JP (1) JPS59161060A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183149A (ja) * 1988-01-18 1989-07-20 Nec Corp 半導体装置の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
GB2204992A (en) * 1987-05-05 1988-11-23 British Telecomm Bipolar transistor
US5225359A (en) * 1990-08-17 1993-07-06 National Semiconductor Corporation Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors
JP4213776B2 (ja) * 1997-11-28 2009-01-21 光照 木村 Ｍｏｓゲートショットキートンネルトランジスタおよびこれを用いた集積回路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device
JPS5730366A (en) * 1980-07-30 1982-02-18 Oki Electric Ind Co Ltd Schottky transistor and manufacture thereof
JPS57187963A (en) * 1981-05-14 1982-11-18 Nec Corp Manufacture of semiconductor device
JPS5856459A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953266A (en) * 1968-11-28 1976-04-27 Toshio Takai Process for fabricating a semiconductor device
JPS5365078A (en) * 1976-11-24 1978-06-10 Toshiba Corp Production of junction type field effect transistor
FR2461358A1 (fr) * 1979-07-06 1981-01-30 Thomson Csf Procede de realisation d'un transistor a effet de champ a grille auto-alignee, et transistor obtenu par ce procede
US4317276A (en) * 1980-06-12 1982-03-02 Teletype Corporation Method of manufacturing an insulated gate field-effect transistor therefore in a silicon wafer
JPS5735341A (en) * 1980-08-12 1982-02-25 Toshiba Corp Method of seperating elements of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device
JPS5730366A (en) * 1980-07-30 1982-02-18 Oki Electric Ind Co Ltd Schottky transistor and manufacture thereof
JPS57187963A (en) * 1981-05-14 1982-11-18 Nec Corp Manufacture of semiconductor device
JPS5856459A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01183149A (ja) * 1988-01-18 1989-07-20 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US4512076A (en) 1985-04-23
JPH0510827B2 (cg-RX-API-DMAC10.html) 1993-02-10

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