JPH0343778B2 - - Google Patents

Info

Publication number
JPH0343778B2
JPH0343778B2 JP57057240A JP5724082A JPH0343778B2 JP H0343778 B2 JPH0343778 B2 JP H0343778B2 JP 57057240 A JP57057240 A JP 57057240A JP 5724082 A JP5724082 A JP 5724082A JP H0343778 B2 JPH0343778 B2 JP H0343778B2
Authority
JP
Japan
Prior art keywords
polysilicon
wiring
diffusion layer
substrate
direct contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57057240A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58175846A (ja
Inventor
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57057240A priority Critical patent/JPS58175846A/ja
Priority to US06/482,229 priority patent/US4528744A/en
Priority to EP83301920A priority patent/EP0091775B1/en
Priority to DE8383301920T priority patent/DE3377178D1/de
Publication of JPS58175846A publication Critical patent/JPS58175846A/ja
Publication of JPH0343778B2 publication Critical patent/JPH0343778B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/20—
    • H10W20/066—
    • H10W20/0698—
    • H10W20/4451—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP57057240A 1982-04-08 1982-04-08 半導体装置の製造方法 Granted JPS58175846A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57057240A JPS58175846A (ja) 1982-04-08 1982-04-08 半導体装置の製造方法
US06/482,229 US4528744A (en) 1982-04-08 1983-04-05 Method of manufacturing a semiconductor device
EP83301920A EP0091775B1 (en) 1982-04-08 1983-04-06 A method of manufacturing a semiconductor device comprising an interconnection layer
DE8383301920T DE3377178D1 (en) 1982-04-08 1983-04-06 A method of manufacturing a semiconductor device comprising an interconnection layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57057240A JPS58175846A (ja) 1982-04-08 1982-04-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58175846A JPS58175846A (ja) 1983-10-15
JPH0343778B2 true JPH0343778B2 (cg-RX-API-DMAC10.html) 1991-07-03

Family

ID=13050004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57057240A Granted JPS58175846A (ja) 1982-04-08 1982-04-08 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4528744A (cg-RX-API-DMAC10.html)
EP (1) EP0091775B1 (cg-RX-API-DMAC10.html)
JP (1) JPS58175846A (cg-RX-API-DMAC10.html)
DE (1) DE3377178D1 (cg-RX-API-DMAC10.html)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0618213B2 (ja) * 1982-06-25 1994-03-09 松下電子工業株式会社 半導体装置の製造方法
US4488348A (en) * 1983-06-15 1984-12-18 Hewlett-Packard Company Method for making a self-aligned vertically stacked gate MOS device
IT1213120B (it) * 1984-01-10 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante.
DE3530065C2 (de) * 1984-08-22 1999-11-18 Mitsubishi Electric Corp Verfahren zur Herstellung eines Halbleiters
GB2164491B (en) * 1984-09-14 1988-04-07 Stc Plc Semiconductor devices
US5190886A (en) * 1984-12-11 1993-03-02 Seiko Epson Corporation Semiconductor device and method of production
JPS61139058A (ja) * 1984-12-11 1986-06-26 Seiko Epson Corp 半導体製造装置
US4743564A (en) * 1984-12-28 1988-05-10 Kabushiki Kaisha Toshiba Method for manufacturing a complementary MOS type semiconductor device
US4635347A (en) * 1985-03-29 1987-01-13 Advanced Micro Devices, Inc. Method of fabricating titanium silicide gate electrodes and interconnections
DE3683679D1 (de) * 1985-04-26 1992-03-12 Fujitsu Ltd Verfahren zur herstellung einer kontaktanordnung fuer eine halbleiteranordnung.
JPS61263137A (ja) * 1985-05-07 1986-11-21 Hitachi Ltd 半導体装置
CA1235824A (en) * 1985-06-28 1988-04-26 Vu Q. Ho Vlsi mosfet circuits using refractory metal and/or refractory metal silicide
US4630357A (en) * 1985-08-02 1986-12-23 Ncr Corporation Method for forming improved contacts between interconnect layers of an integrated circuit
US4703551A (en) * 1986-01-24 1987-11-03 Ncr Corporation Process for forming LDD MOS/CMOS structures
US4753897A (en) * 1986-03-14 1988-06-28 Motorola Inc. Method for providing contact separation in silicided devices using false gate
US4908688A (en) * 1986-03-14 1990-03-13 Motorola, Inc. Means and method for providing contact separation in silicided devices
JP2537936B2 (ja) * 1986-04-23 1996-09-25 エイ・ティ・アンド・ティ・コーポレーション 半導体デバイスの製作プロセス
US4825271A (en) * 1986-05-20 1989-04-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory
JPS632535U (cg-RX-API-DMAC10.html) * 1986-06-20 1988-01-09
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
US4735680A (en) * 1986-11-17 1988-04-05 Yen Yung Chau Method for the self-aligned silicide formation in IC fabrication
US4855247A (en) * 1988-01-19 1989-08-08 Standard Microsystems Corporation Process for fabricating self-aligned silicide lightly doped drain MOS devices
GB2214708A (en) * 1988-01-20 1989-09-06 Philips Nv A method of manufacturing a semiconductor device
US4902379A (en) * 1988-02-08 1990-02-20 Eastman Kodak Company UHV compatible lift-off method for patterning nobel metal silicide
JPH03141645A (ja) * 1989-07-10 1991-06-17 Texas Instr Inc <Ti> ポリサイドによる局所的相互接続方法とその方法により製造された半導体素子
US5041394A (en) * 1989-09-11 1991-08-20 Texas Instruments Incorporated Method for forming protective barrier on silicided regions
US4988643A (en) * 1989-10-10 1991-01-29 Vlsi Technology, Inc. Self-aligning metal interconnect fabrication
US5070029A (en) * 1989-10-30 1991-12-03 Motorola, Inc. Semiconductor process using selective deposition
US5010030A (en) * 1989-10-30 1991-04-23 Motorola, Inc. Semiconductor process using selective deposition
JP2757927B2 (ja) * 1990-06-28 1998-05-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体基板上の隔置されたシリコン領域の相互接続方法
JP2632620B2 (ja) * 1992-01-14 1997-07-23 大岡技研株式会社 歯車製品
US5306951A (en) * 1992-05-14 1994-04-26 Micron Technology, Inc. Sidewall silicidation for improved reliability and conductivity
US5529941A (en) * 1994-03-28 1996-06-25 Vlsi Technology, Inc. Method for making an integrated circuit structure
US5585299A (en) * 1996-03-19 1996-12-17 United Microelectronics Corporation Process for fabricating a semiconductor electrostatic discharge (ESD) protective device
JPH10112531A (ja) * 1996-08-13 1998-04-28 Hitachi Ltd 半導体集積回路装置の製造方法
US6335280B1 (en) * 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
TW396646B (en) * 1997-09-11 2000-07-01 Lg Semicon Co Ltd Manufacturing method of semiconductor devices
KR100344818B1 (ko) * 1997-09-24 2002-11-18 주식회사 하이닉스반도체 반도체소자및그의제조방법
US6208004B1 (en) * 1998-08-19 2001-03-27 Philips Semiconductor, Inc. Semiconductor device with high-temperature-stable gate electrode for sub-micron applications and fabrication thereof
US20050060933A1 (en) * 2003-08-22 2005-03-24 Henson David Lee Horticultural container lining for enhancing contained soil's water absorption
US7504329B2 (en) * 2005-05-11 2009-03-17 Interuniversitair Microelektronica Centrum (Imec) Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4102733A (en) * 1977-04-29 1978-07-25 International Business Machines Corporation Two and three mask process for IGFET fabrication
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
US4277881A (en) * 1978-05-26 1981-07-14 Rockwell International Corporation Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
DE2926874A1 (de) * 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
US4305200A (en) * 1979-11-06 1981-12-15 Hewlett-Packard Company Method of forming self-registering source, drain, and gate contacts for FET transistor structures
JPS5748246A (en) * 1980-08-13 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
US4419809A (en) * 1981-12-30 1983-12-13 International Business Machines Corporation Fabrication process of sub-micrometer channel length MOSFETs

Also Published As

Publication number Publication date
EP0091775B1 (en) 1988-06-22
EP0091775A3 (en) 1985-07-03
DE3377178D1 (en) 1988-07-28
US4528744A (en) 1985-07-16
EP0091775A2 (en) 1983-10-19
JPS58175846A (ja) 1983-10-15

Similar Documents

Publication Publication Date Title
JPH0343778B2 (cg-RX-API-DMAC10.html)
JPS62588B2 (cg-RX-API-DMAC10.html)
EP0396357B1 (en) Process for forming CMOS field effect transistors
JP3688734B2 (ja) 集積回路の一部を製造する方法及びその構成体
JPH0564456B2 (cg-RX-API-DMAC10.html)
US4069067A (en) Method of making a semiconductor device
US4901134A (en) Semiconductor device and manufacturing method thereof
EP0097918B1 (en) Semiconductor device and method of making the same
US5443994A (en) Method of fabricating a semiconductor device having a borosilicate glass spacer
JPH05275546A (ja) 半導体デバイス及びその新規な埋込み相互接続構造並びにそれぞれを形成する方法
US4883772A (en) Process for making a self-aligned silicide shunt
JP3173094B2 (ja) Ｍｏｓトランジスタの製造方法
JPH0554263B2 (cg-RX-API-DMAC10.html)
JPH0581051B2 (cg-RX-API-DMAC10.html)
JPH065696B2 (ja) 半導体装置の製造方法
JPS6242391B2 (cg-RX-API-DMAC10.html)
JPH0127589B2 (cg-RX-API-DMAC10.html)
JPS6138858B2 (cg-RX-API-DMAC10.html)
JP3387518B2 (ja) 半導体装置
JPH10284438A (ja) 半導体集積回路及びその製造方法
JP2874885B2 (ja) 半導体装置及びその製造方法
JP2745946B2 (ja) 半導体集積回路の製造方法
JPH02203565A (ja) 半導体装置及びその製造方法
JP3147374B2 (ja) 半導体装置
JPS60219771A (ja) Ｍｏｓ形半導体装置の製造方法