JPS5914897B2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5914897B2 JPS5914897B2 JP50016561A JP1656175A JPS5914897B2 JP S5914897 B2 JPS5914897 B2 JP S5914897B2 JP 50016561 A JP50016561 A JP 50016561A JP 1656175 A JP1656175 A JP 1656175A JP S5914897 B2 JPS5914897 B2 JP S5914897B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- transistor
- collector
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 44
- 239000012535 impurity Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 16
- 230000012010 growth Effects 0.000 description 52
- 238000009792 diffusion process Methods 0.000 description 39
- 238000002955 isolation Methods 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000000295 complement effect Effects 0.000 description 12
- 239000000969 carrier Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
US05/654,758 US4038680A (en) | 1972-12-29 | 1976-02-03 | Semiconductor integrated circuit device |
GB440076A GB1533156A (en) | 1975-02-08 | 1976-02-04 | Semiconductor integrated circuits |
CA76245057A CA1048655A (en) | 1975-02-08 | 1976-02-05 | Semiconductor integrated circuit device |
IT1995076A IT1055132B (it) | 1975-02-08 | 1976-02-05 | Dispositivo semiconduttore a circuito intergrato |
CH146276A CH607332A5 (US06633782-20031014-M00005.png) | 1975-02-08 | 1976-02-06 | |
FR7603362A FR2300417A1 (fr) | 1975-02-08 | 1976-02-06 | Circuit semi-conducteur integre a transistors complementaires pnp-npn |
DE19762604735 DE2604735A1 (de) | 1975-02-08 | 1976-02-06 | Integrierter halbleiterbaustein |
NL7601307A NL7601307A (nl) | 1975-02-08 | 1976-02-09 | Halfgeleiderinrichting met geintegreerde schakeling. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50016561A JPS5914897B2 (ja) | 1975-02-08 | 1975-02-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5191680A JPS5191680A (US06633782-20031014-M00005.png) | 1976-08-11 |
JPS5914897B2 true JPS5914897B2 (ja) | 1984-04-06 |
Family
ID=11919681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50016561A Expired JPS5914897B2 (ja) | 1972-12-29 | 1975-02-08 | 半導体装置 |
Country Status (8)
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61164399U (US06633782-20031014-M00005.png) * | 1985-03-30 | 1986-10-11 | ||
JPS632549Y2 (US06633782-20031014-M00005.png) * | 1983-10-04 | 1988-01-22 | ||
JPS6386192U (US06633782-20031014-M00005.png) * | 1986-11-19 | 1988-06-06 | ||
JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
JPH03128793U (US06633782-20031014-M00005.png) * | 1990-04-10 | 1991-12-25 | ||
JPH0450493U (US06633782-20031014-M00005.png) * | 1990-08-31 | 1992-04-28 | ||
JPH053587Y2 (US06633782-20031014-M00005.png) * | 1986-11-19 | 1993-01-28 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56126960A (en) * | 1980-03-11 | 1981-10-05 | Nec Corp | Manufacture of semiconductor device |
EP0093304B1 (en) * | 1982-04-19 | 1986-01-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor ic and method of making the same |
IT1218471B (it) * | 1985-05-09 | 1990-04-19 | Ates Componenti Elettron | Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato |
DE3883459T2 (de) * | 1987-07-29 | 1994-03-17 | Fairchild Semiconductor | Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren. |
FR3106931B1 (fr) * | 2020-01-30 | 2022-02-18 | St Microelectronics Crolles 2 Sas | Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4991191A (US06633782-20031014-M00005.png) * | 1972-12-29 | 1974-08-30 |
-
1975
- 1975-02-08 JP JP50016561A patent/JPS5914897B2/ja not_active Expired
-
1976
- 1976-02-04 GB GB440076A patent/GB1533156A/en not_active Expired
- 1976-02-05 IT IT1995076A patent/IT1055132B/it active
- 1976-02-05 CA CA76245057A patent/CA1048655A/en not_active Expired
- 1976-02-06 CH CH146276A patent/CH607332A5/xx not_active IP Right Cessation
- 1976-02-06 DE DE19762604735 patent/DE2604735A1/de not_active Withdrawn
- 1976-02-06 FR FR7603362A patent/FR2300417A1/fr active Granted
- 1976-02-09 NL NL7601307A patent/NL7601307A/xx not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4991191A (US06633782-20031014-M00005.png) * | 1972-12-29 | 1974-08-30 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS632549Y2 (US06633782-20031014-M00005.png) * | 1983-10-04 | 1988-01-22 | ||
JPS61164399U (US06633782-20031014-M00005.png) * | 1985-03-30 | 1986-10-11 | ||
JPS6386192U (US06633782-20031014-M00005.png) * | 1986-11-19 | 1988-06-06 | ||
JPH053587Y2 (US06633782-20031014-M00005.png) * | 1986-11-19 | 1993-01-28 | ||
JPH02296994A (ja) * | 1989-05-09 | 1990-12-07 | Fujita Corp | 泥漿シールド機のカツターヘツド |
JPH03128793U (US06633782-20031014-M00005.png) * | 1990-04-10 | 1991-12-25 | ||
JPH0450493U (US06633782-20031014-M00005.png) * | 1990-08-31 | 1992-04-28 |
Also Published As
Publication number | Publication date |
---|---|
FR2300417A1 (fr) | 1976-09-03 |
DE2604735A1 (de) | 1976-08-19 |
IT1055132B (it) | 1981-12-21 |
NL7601307A (nl) | 1976-08-10 |
GB1533156A (en) | 1978-11-22 |
CA1048655A (en) | 1979-02-13 |
CH607332A5 (US06633782-20031014-M00005.png) | 1978-12-15 |
FR2300417B1 (US06633782-20031014-M00005.png) | 1980-03-21 |
JPS5191680A (US06633782-20031014-M00005.png) | 1976-08-11 |
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