JPS59106147A - マスクｒｏｍ - Google Patents
マスクｒｏｍInfo
- Publication number
- JPS59106147A JPS59106147A JP57217386A JP21738682A JPS59106147A JP S59106147 A JPS59106147 A JP S59106147A JP 57217386 A JP57217386 A JP 57217386A JP 21738682 A JP21738682 A JP 21738682A JP S59106147 A JPS59106147 A JP S59106147A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- conductive layer
- memory array
- bit
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- DOSMHBDKKKMIEF-UHFFFAOYSA-N 2-[3-(diethylamino)-6-diethylazaniumylidenexanthen-9-yl]-5-[3-[3-[4-(1-methylindol-3-yl)-2,5-dioxopyrrol-3-yl]indol-1-yl]propylsulfamoyl]benzenesulfonate Chemical compound C1=CC(=[N+](CC)CC)C=C2OC3=CC(N(CC)CC)=CC=C3C(C=3C(=CC(=CC=3)S(=O)(=O)NCCCN3C4=CC=CC=C4C(C=4C(NC(=O)C=4C=4C5=CC=CC=C5N(C)C=4)=O)=C3)S([O-])(=O)=O)=C21 DOSMHBDKKKMIEF-UHFFFAOYSA-N 0.000 description 1
- 101100041688 Caenorhabditis elegans sao-1 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/10—ROM devices comprising bipolar components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217386A JPS59106147A (ja) | 1982-12-10 | 1982-12-10 | マスクｒｏｍ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217386A JPS59106147A (ja) | 1982-12-10 | 1982-12-10 | マスクｒｏｍ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59106147A true JPS59106147A (ja) | 1984-06-19 |
| JPS611904B2 JPS611904B2 (enExample) | 1986-01-21 |
Family
ID=16703358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57217386A Granted JPS59106147A (ja) | 1982-12-10 | 1982-12-10 | マスクｒｏｍ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59106147A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4008883A1 (de) * | 1989-03-20 | 1990-09-27 | Mitsubishi Electric Corp | Herstellungsverfahren fuer ein masken-rom und hiermit hergestelltes masken-rom |
| JP2007514310A (ja) * | 2003-12-12 | 2007-05-31 | コミサリア、ア、レネルジ、アトミク | 可塑的に変形可能な不可逆的ストレージ媒体と、このような一媒体を製造する方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960010736B1 (ko) * | 1991-02-19 | 1996-08-07 | 미쓰비시뎅끼 가부시끼가이샤 | 마스크 rom 및 그 제조방법 |
-
1982
- 1982-12-10 JP JP57217386A patent/JPS59106147A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4008883A1 (de) * | 1989-03-20 | 1990-09-27 | Mitsubishi Electric Corp | Herstellungsverfahren fuer ein masken-rom und hiermit hergestelltes masken-rom |
| DE4008883C2 (de) * | 1989-03-20 | 1994-06-16 | Mitsubishi Electric Corp | Nur-Lese-Speicher vom Maskentyp und Verfahren zu dessen Herstellung |
| JP2007514310A (ja) * | 2003-12-12 | 2007-05-31 | コミサリア、ア、レネルジ、アトミク | 可塑的に変形可能な不可逆的ストレージ媒体と、このような一媒体を製造する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS611904B2 (enExample) | 1986-01-21 |
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