JPS5886724A - 電極および配線の製造方法 - Google Patents

電極および配線の製造方法

Info

Publication number
JPS5886724A
JPS5886724A JP56184800A JP18480081A JPS5886724A JP S5886724 A JPS5886724 A JP S5886724A JP 56184800 A JP56184800 A JP 56184800A JP 18480081 A JP18480081 A JP 18480081A JP S5886724 A JPS5886724 A JP S5886724A
Authority
JP
Japan
Prior art keywords
alloy
wti
wiring
temperature
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56184800A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0361346B2 (OSRAM
Inventor
Masaoki Ishikawa
石川　昌興
Hideaki Kozu
神津　英明
Kohei Higuchi
行平 樋口
Hidekazu Okabayashi
岡林　秀和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56184800A priority Critical patent/JPS5886724A/ja
Publication of JPS5886724A publication Critical patent/JPS5886724A/ja
Publication of JPH0361346B2 publication Critical patent/JPH0361346B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56184800A 1981-11-18 1981-11-18 電極および配線の製造方法 Granted JPS5886724A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56184800A JPS5886724A (ja) 1981-11-18 1981-11-18 電極および配線の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56184800A JPS5886724A (ja) 1981-11-18 1981-11-18 電極および配線の製造方法

Publications (2)

Publication Number Publication Date
JPS5886724A true JPS5886724A (ja) 1983-05-24
JPH0361346B2 JPH0361346B2 (OSRAM) 1991-09-19

Family

ID=16159510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56184800A Granted JPS5886724A (ja) 1981-11-18 1981-11-18 電極および配線の製造方法

Country Status (1)

Country Link
JP (1) JPS5886724A (OSRAM)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60183726A (ja) * 1984-03-02 1985-09-19 Toshiba Corp 半導体装置の電極パタ−ンの形成方法
JPS62200747A (ja) * 1986-02-28 1987-09-04 Toshiba Corp 半導体装置の製造方法
US4923823A (en) * 1987-09-30 1990-05-08 Mitsubishi Denki Kabushiki Kaisha Method of fabricating a self aligned semiconductor device
JPH02197571A (ja) * 1989-01-26 1990-08-06 Hitachi Ltd 薄膜形成法とそれによって得られた半導体装置及びその製造方法
US5093274A (en) * 1990-02-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacture thereof
KR100364810B1 (ko) * 2000-02-22 2002-12-16 주식회사 하이닉스반도체 반도체소자의 제조방법
JP2007042871A (ja) * 2005-08-03 2007-02-15 Seiko Epson Corp 強誘電体キャパシタおよびその製造方法、ならびに強誘電体メモリ装置
JP2011108837A (ja) * 2009-11-17 2011-06-02 Seiko Epson Corp 半導体装置および電子部品並びにそれらの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
THIN SOLID FILMS=1978 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60183726A (ja) * 1984-03-02 1985-09-19 Toshiba Corp 半導体装置の電極パタ−ンの形成方法
JPS62200747A (ja) * 1986-02-28 1987-09-04 Toshiba Corp 半導体装置の製造方法
US4923823A (en) * 1987-09-30 1990-05-08 Mitsubishi Denki Kabushiki Kaisha Method of fabricating a self aligned semiconductor device
JPH02197571A (ja) * 1989-01-26 1990-08-06 Hitachi Ltd 薄膜形成法とそれによって得られた半導体装置及びその製造方法
US5093274A (en) * 1990-02-02 1992-03-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacture thereof
KR100364810B1 (ko) * 2000-02-22 2002-12-16 주식회사 하이닉스반도체 반도체소자의 제조방법
JP2007042871A (ja) * 2005-08-03 2007-02-15 Seiko Epson Corp 強誘電体キャパシタおよびその製造方法、ならびに強誘電体メモリ装置
JP2011108837A (ja) * 2009-11-17 2011-06-02 Seiko Epson Corp 半導体装置および電子部品並びにそれらの製造方法
US8212356B2 (en) 2009-11-17 2012-07-03 Seiko Epson Corporation Semiconductor device having multi-layered wiring layer and fabrication process thereof

Also Published As

Publication number Publication date
JPH0361346B2 (OSRAM) 1991-09-19

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