JPS5851561A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS5851561A
JPS5851561A JP56149433A JP14943381A JPS5851561A JP S5851561 A JPS5851561 A JP S5851561A JP 56149433 A JP56149433 A JP 56149433A JP 14943381 A JP14943381 A JP 14943381A JP S5851561 A JPS5851561 A JP S5851561A
Authority
JP
Japan
Prior art keywords
type
circuit
region
semiconductor integrated
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56149433A
Other languages
English (en)
Japanese (ja)
Inventor
Sadao Ogura
小倉　節生
Shizuo Kondo
近藤　静雄
Makoto Furuhata
降「はた」　誠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56149433A priority Critical patent/JPS5851561A/ja
Priority to IT23326/82A priority patent/IT1153730B/it
Priority to FR8215875A priority patent/FR2514200A1/fr
Priority to GB08227060A priority patent/GB2107117B/en
Priority to DE19823235409 priority patent/DE3235409A1/de
Publication of JPS5851561A publication Critical patent/JPS5851561A/ja
Priority to FR8318617A priority patent/FR2533367B1/fr
Priority to GB08502454A priority patent/GB2154061B/en
Priority to GB08502453A priority patent/GB2154060B/en
Priority to SG40887A priority patent/SG40887G/en
Priority to SG40987A priority patent/SG40987G/en
Priority to HK691/87A priority patent/HK69187A/xx
Priority to HK698/87A priority patent/HK69887A/xx
Priority to MY644/87A priority patent/MY8700644A/xx
Priority to MY648/87A priority patent/MY8700648A/xx
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H03K19/01818—Interface arrangements for integrated injection logic (I2L)

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP56149433A 1981-09-24 1981-09-24 半導体集積回路装置 Pending JPS5851561A (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP56149433A JPS5851561A (ja) 1981-09-24 1981-09-24 半導体集積回路装置
IT23326/82A IT1153730B (it) 1981-09-24 1982-09-17 Dispositivi a circuito integrato a semiconduttori e procedimento per la loro fabbricazione
FR8215875A FR2514200A1 (fr) 1981-09-24 1982-09-21 Dispositif possedant un circuit a transistors a effet de champs a grille isolee complementaire et un circuit logique integre a injection sur le meme substrat semi-conducteur, ainsi que son procede de fabrication
GB08227060A GB2107117B (en) 1981-09-24 1982-09-22 Semiconductor integrated circuit devices
DE19823235409 DE3235409A1 (de) 1981-09-24 1982-09-24 Integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung
FR8318617A FR2533367B1 (fr) 1981-09-24 1983-11-23 Procede de fabrication d'un dispositif possedant un circuit a transistors a effet de champs a grille isolee complementaire et un circuit logique integre a injection sur le meme substrat semiconducteur
GB08502453A GB2154060B (en) 1981-09-24 1985-01-31 Semiconductor integrated circuit devices
GB08502454A GB2154061B (en) 1981-09-24 1985-01-31 Methods of manufacturing semiconductor circuit devices
SG40887A SG40887G (en) 1981-09-24 1987-05-06 Semiconductor integrated circuit devices and method of manufacturing the same
SG40987A SG40987G (en) 1981-09-24 1987-05-06 Methods of manufacturing semiconductor circuit devices
HK691/87A HK69187A (en) 1981-09-24 1987-09-24 Semiconductor integrated circuit devices and method of manufacturing the same
HK698/87A HK69887A (en) 1981-09-24 1987-09-24 Methods of manufacturing semiconductor circuit devices
MY644/87A MY8700644A (en) 1981-09-24 1987-12-30 Semiconductor integrated circuit devices and method of manufacturing the same
MY648/87A MY8700648A (en) 1981-09-24 1987-12-30 Methods of manufacturing semiconductor circuit devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149433A JPS5851561A (ja) 1981-09-24 1981-09-24 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPS5851561A true JPS5851561A (ja) 1983-03-26

Family

ID=15474999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149433A Pending JPS5851561A (ja) 1981-09-24 1981-09-24 半導体集積回路装置

Country Status (8)

Country Link
JP (1) JPS5851561A (fr)
DE (1) DE3235409A1 (fr)
FR (2) FR2514200A1 (fr)
GB (3) GB2107117B (fr)
HK (2) HK69187A (fr)
IT (1) IT1153730B (fr)
MY (1) MY8700644A (fr)
SG (1) SG40887G (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253261A (ja) * 1984-05-29 1985-12-13 Clarion Co Ltd Ｉｉｌ素子を含む集積回路
JPH0387403A (ja) * 1989-08-31 1991-04-12 Mitsubishi Electric Corp 融雪装置
JPH03235802A (ja) * 1990-02-14 1991-10-21 Mitsubishi Electric Corp 融雪装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
KR920015363A (ko) * 1991-01-22 1992-08-26 김광호 Ttl 입력 버퍼회로

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS5611661A (en) * 1979-07-09 1981-02-05 Sankyo Seiki Mfg Co Ltd Magnetic card reader of normal card containing type
JPS56116661A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594241A (en) * 1968-01-11 1971-07-20 Tektronix Inc Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4429326A (en) * 1978-11-29 1984-01-31 Hitachi, Ltd. I2 L Memory with nonvolatile storage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS5611661A (en) * 1979-07-09 1981-02-05 Sankyo Seiki Mfg Co Ltd Magnetic card reader of normal card containing type
JPS56116661A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60253261A (ja) * 1984-05-29 1985-12-13 Clarion Co Ltd Ｉｉｌ素子を含む集積回路
JPH0387403A (ja) * 1989-08-31 1991-04-12 Mitsubishi Electric Corp 融雪装置
JPH03235802A (ja) * 1990-02-14 1991-10-21 Mitsubishi Electric Corp 融雪装置

Also Published As

Publication number Publication date
GB2154061A (en) 1985-08-29
DE3235409A1 (de) 1983-04-14
IT8223326A0 (it) 1982-09-17
GB2154060B (en) 1986-05-14
FR2514200B1 (fr) 1984-07-27
MY8700644A (en) 1987-12-31
GB2154060A (en) 1985-08-29
GB2154061B (en) 1986-04-09
HK69887A (en) 1987-10-02
GB2107117B (en) 1986-04-09
FR2533367B1 (fr) 1986-01-24
HK69187A (en) 1987-10-02
GB8502453D0 (en) 1985-03-06
FR2533367A1 (fr) 1984-03-23
SG40887G (en) 1987-07-17
FR2514200A1 (fr) 1983-04-08
GB8502454D0 (en) 1985-03-06
IT1153730B (it) 1987-01-14
GB2107117A (en) 1983-04-20

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