JPS584932A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS584932A
JPS584932A JP56102882A JP10288281A JPS584932A JP S584932 A JPS584932 A JP S584932A JP 56102882 A JP56102882 A JP 56102882A JP 10288281 A JP10288281 A JP 10288281A JP S584932 A JPS584932 A JP S584932A
Authority
JP
Japan
Prior art keywords
layer
etching
polycrystalline
film
polysilicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56102882A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0359577B2 (OSRAM
Inventor
Keiji Nishimoto
西本　恵治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56102882A priority Critical patent/JPS584932A/ja
Publication of JPS584932A publication Critical patent/JPS584932A/ja
Publication of JPH0359577B2 publication Critical patent/JPH0359577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/268—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56102882A 1981-06-30 1981-06-30 半導体装置の製造方法 Granted JPS584932A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56102882A JPS584932A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56102882A JPS584932A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS584932A true JPS584932A (ja) 1983-01-12
JPH0359577B2 JPH0359577B2 (OSRAM) 1991-09-11

Family

ID=14339233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56102882A Granted JPS584932A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS584932A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181539A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法
JPS60735A (ja) * 1983-06-16 1985-01-05 Pioneer Electronic Corp 電極の形成方法
JPS6025249A (ja) * 1983-07-22 1985-02-08 Pioneer Electronic Corp 半導体装置の製造方法
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50118673A (OSRAM) * 1974-03-01 1975-09-17
JPS5470771A (en) * 1977-11-16 1979-06-06 Cho Lsi Gijutsu Kenkyu Kumiai Dry etching method
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50118673A (OSRAM) * 1974-03-01 1975-09-17
JPS5470771A (en) * 1977-11-16 1979-06-06 Cho Lsi Gijutsu Kenkyu Kumiai Dry etching method
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181539A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法
JPS60735A (ja) * 1983-06-16 1985-01-05 Pioneer Electronic Corp 電極の形成方法
JPS6025249A (ja) * 1983-07-22 1985-02-08 Pioneer Electronic Corp 半導体装置の製造方法
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Also Published As

Publication number Publication date
JPH0359577B2 (OSRAM) 1991-09-11

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