JPH0359577B2 - - Google Patents

Info

Publication number
JPH0359577B2
JPH0359577B2 JP56102882A JP10288281A JPH0359577B2 JP H0359577 B2 JPH0359577 B2 JP H0359577B2 JP 56102882 A JP56102882 A JP 56102882A JP 10288281 A JP10288281 A JP 10288281A JP H0359577 B2 JPH0359577 B2 JP H0359577B2
Authority
JP
Japan
Prior art keywords
polysilicon layer
gate electrode
etching
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56102882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS584932A (ja
Inventor
Keiji Nishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56102882A priority Critical patent/JPS584932A/ja
Publication of JPS584932A publication Critical patent/JPS584932A/ja
Publication of JPH0359577B2 publication Critical patent/JPH0359577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/268

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56102882A 1981-06-30 1981-06-30 半導体装置の製造方法 Granted JPS584932A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56102882A JPS584932A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56102882A JPS584932A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS584932A JPS584932A (ja) 1983-01-12
JPH0359577B2 true JPH0359577B2 (OSRAM) 1991-09-11

Family

ID=14339233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56102882A Granted JPS584932A (ja) 1981-06-30 1981-06-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS584932A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181539A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法
JPS60735A (ja) * 1983-06-16 1985-01-05 Pioneer Electronic Corp 電極の形成方法
JPS6025249A (ja) * 1983-07-22 1985-02-08 Pioneer Electronic Corp 半導体装置の製造方法
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50118673A (OSRAM) * 1974-03-01 1975-09-17
JPS5470771A (en) * 1977-11-16 1979-06-06 Cho Lsi Gijutsu Kenkyu Kumiai Dry etching method
JPS5487172A (en) * 1977-12-23 1979-07-11 Hitachi Ltd Manufacture for simiconductor device

Also Published As

Publication number Publication date
JPS584932A (ja) 1983-01-12

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