JPS58169964A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS58169964A JPS58169964A JP57052774A JP5277482A JPS58169964A JP S58169964 A JPS58169964 A JP S58169964A JP 57052774 A JP57052774 A JP 57052774A JP 5277482 A JP5277482 A JP 5277482A JP S58169964 A JPS58169964 A JP S58169964A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- substrate
- silicon
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57052774A JPS58169964A (ja) | 1982-03-30 | 1982-03-30 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57052774A JPS58169964A (ja) | 1982-03-30 | 1982-03-30 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58169964A true JPS58169964A (ja) | 1983-10-06 |
| JPH0332232B2 JPH0332232B2 (enrdf_load_stackoverflow) | 1991-05-10 |
Family
ID=12924205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57052774A Granted JPS58169964A (ja) | 1982-03-30 | 1982-03-30 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58169964A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61204962A (ja) * | 1985-03-08 | 1986-09-11 | Seiko Instr & Electronics Ltd | Cmosの製造方法 |
| JPH02308553A (ja) * | 1989-05-23 | 1990-12-21 | Fujitsu Ltd | Soi型半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55153343A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Semiconductor device and its manufacture |
| JPS5742143A (en) * | 1980-08-28 | 1982-03-09 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1982
- 1982-03-30 JP JP57052774A patent/JPS58169964A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55153343A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Semiconductor device and its manufacture |
| JPS5742143A (en) * | 1980-08-28 | 1982-03-09 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61204962A (ja) * | 1985-03-08 | 1986-09-11 | Seiko Instr & Electronics Ltd | Cmosの製造方法 |
| JPH02308553A (ja) * | 1989-05-23 | 1990-12-21 | Fujitsu Ltd | Soi型半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0332232B2 (enrdf_load_stackoverflow) | 1991-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6072268A (ja) | バイポ−ラ・トランジスタ構造の製造方法 | |
| JPS6057952A (ja) | 半導体装置の製造方法 | |
| KR890003382B1 (ko) | 유전체 분리 콤프리멘타리 ic의 제조방법 | |
| JPS58169964A (ja) | 半導体装置 | |
| JP2589209B2 (ja) | 半導体装置の素子間分離領域の形成方法 | |
| JPS63174366A (ja) | 半導体装置の製造方法 | |
| JPS60144950A (ja) | 半導体装置の製造方法 | |
| JP3209443B2 (ja) | バイポーラトランジスタの製造方法 | |
| JPH0693459B2 (ja) | 高速バイポーラトランジスタ及びその製造方法 | |
| JP2993039B2 (ja) | 能動層積層素子 | |
| JPH0330293B2 (enrdf_load_stackoverflow) | ||
| JPS60193358A (ja) | 半導体装置の製造方法 | |
| JPH0267728A (ja) | 素子分離用酸化膜の形成方法 | |
| JPS5965465A (ja) | 半導体装置の製造方法 | |
| JPS6194368A (ja) | 半導体装置の製造方法 | |
| JPS6372160A (ja) | 半導体装置 | |
| JPS6185839A (ja) | 半導体集積回路の製造方法 | |
| JPS6089940A (ja) | 半導体装置の製造方法 | |
| JPS6194369A (ja) | 半導体装置の製造方法 | |
| JPS60251640A (ja) | 半導体装置およびその製造方法 | |
| JPS59151471A (ja) | 半導体装置 | |
| JPH0513441A (ja) | 薄膜mosトランジスタの製造方法 | |
| JPS60224245A (ja) | 半導体装置の製造方法 | |
| JPS61274323A (ja) | 半導体装置の製造方法 | |
| JPH01282867A (ja) | バイポーラトランジスタの製造方法 |