JPS58106865A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法

Info

Publication number
JPS58106865A
JPS58106865A JP56204520A JP20452081A JPS58106865A JP S58106865 A JPS58106865 A JP S58106865A JP 56204520 A JP56204520 A JP 56204520A JP 20452081 A JP20452081 A JP 20452081A JP S58106865 A JPS58106865 A JP S58106865A
Authority
JP
Japan
Prior art keywords
layer
window
conductive layer
semiconductor substrate
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56204520A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0128509B2 (OSRAM
Inventor
Seiichi Takahashi
誠一 高橋
Hiroshi Nagayama
博 長山
Masahiro Ike
池　政弘
Yasuo Shoji
庄司　保夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56204520A priority Critical patent/JPS58106865A/ja
Publication of JPS58106865A publication Critical patent/JPS58106865A/ja
Publication of JPH0128509B2 publication Critical patent/JPH0128509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/40—

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56204520A 1981-12-19 1981-12-19 半導体素子の製造方法 Granted JPS58106865A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56204520A JPS58106865A (ja) 1981-12-19 1981-12-19 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204520A JPS58106865A (ja) 1981-12-19 1981-12-19 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58106865A true JPS58106865A (ja) 1983-06-25
JPH0128509B2 JPH0128509B2 (OSRAM) 1989-06-02

Family

ID=16491886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56204520A Granted JPS58106865A (ja) 1981-12-19 1981-12-19 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58106865A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149055A (ja) * 1983-02-12 1984-08-25 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド バイポ−ラプレ−ナトランジスタの製造方法
JPS63114261A (ja) * 1986-09-11 1988-05-19 フェアチャイルド　セミコンダクタ　コーポレーション トランジスタ用の自己整合型ベース分路
JPH01119064A (ja) * 1987-10-31 1989-05-11 Nec Yamagata Ltd 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53141591A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of semiconductor device
JPS5515231A (en) * 1978-07-19 1980-02-02 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor device
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53141591A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of semiconductor device
JPS5515231A (en) * 1978-07-19 1980-02-02 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor device
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59149055A (ja) * 1983-02-12 1984-08-25 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド バイポ−ラプレ−ナトランジスタの製造方法
JPS63114261A (ja) * 1986-09-11 1988-05-19 フェアチャイルド　セミコンダクタ　コーポレーション トランジスタ用の自己整合型ベース分路
JPH01119064A (ja) * 1987-10-31 1989-05-11 Nec Yamagata Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0128509B2 (OSRAM) 1989-06-02

Similar Documents

Publication Publication Date Title
JP3013371B2 (ja) Ｅｐｒｏｍ記憶トランジスタと論理トランジスタによる集積回路の製造法
JPH0343778B2 (OSRAM)
JPS62290173A (ja) 半導体集積回路装置の製造方法
US4916504A (en) Three-dimensional CMOS inverter
JPS58106865A (ja) 半導体素子の製造方法
JPH0621445A (ja) 半導体装置およびその製造方法
JP3298476B2 (ja) Ｍｏｓトランジスタの製造方法
JP2971085B2 (ja) 半導体装置の製造方法
JPH02122522A (ja) 半導体装置とその製造方法
JP2987875B2 (ja) 縦型ｍｏｓ電界効果トランジスタの製造方法
JPS6228587B2 (OSRAM)
JPS59224141A (ja) 半導体装置の製造方法
JPH0212960A (ja) 半導体装置の製造方法
JPH0554263B2 (OSRAM)
JPS61166154A (ja) Ｍｉｓ型半導体装置の製造方法
JPH0369168A (ja) 薄膜電界効果トランジスタ
JPH06275821A (ja) Ｍｏｓトランジスタとその製造方法
JPS59105363A (ja) 半導体装置の製造方法
JPH0517713B2 (OSRAM)
JPS59210659A (ja) Ｍｏｓ半導体装置の製造法
JPH04368171A (ja) Ｂｉ−ＣＭＯＳ集積回路の製造方法
JPS63111667A (ja) 半導体装置の製造方法
JPH03125479A (ja) 不揮発性記憶素子を有する半導体集積回路の製造方法
JPS6126223B2 (OSRAM)
JP2000164853A (ja) 半導体装置の製造方法