JPH0128509B2 - - Google Patents

Info

Publication number
JPH0128509B2
JPH0128509B2 JP56204520A JP20452081A JPH0128509B2 JP H0128509 B2 JPH0128509 B2 JP H0128509B2 JP 56204520 A JP56204520 A JP 56204520A JP 20452081 A JP20452081 A JP 20452081A JP H0128509 B2 JPH0128509 B2 JP H0128509B2
Authority
JP
Japan
Prior art keywords
layer
conductive layer
semiconductor substrate
impurities
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56204520A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58106865A (ja
Inventor
Seiichi Takahashi
Hiroshi Nagayama
Masahiro Ike
Yasuo Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56204520A priority Critical patent/JPS58106865A/ja
Publication of JPS58106865A publication Critical patent/JPS58106865A/ja
Publication of JPH0128509B2 publication Critical patent/JPH0128509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/40—

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56204520A 1981-12-19 1981-12-19 半導体素子の製造方法 Granted JPS58106865A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56204520A JPS58106865A (ja) 1981-12-19 1981-12-19 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204520A JPS58106865A (ja) 1981-12-19 1981-12-19 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58106865A JPS58106865A (ja) 1983-06-25
JPH0128509B2 true JPH0128509B2 (OSRAM) 1989-06-02

Family

ID=16491886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56204520A Granted JPS58106865A (ja) 1981-12-19 1981-12-19 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58106865A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0116654B1 (de) * 1983-02-12 1986-12-10 Deutsche ITT Industries GmbH Verfahren zum Herstellen von bipolaren Planartransistoren
JPS63114261A (ja) * 1986-09-11 1988-05-19 フェアチャイルド　セミコンダクタ　コーポレーション トランジスタ用の自己整合型ベース分路
JPH01119064A (ja) * 1987-10-31 1989-05-11 Nec Yamagata Ltd 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53141591A (en) * 1977-05-16 1978-12-09 Nec Corp Manufacture of semiconductor device
JPS5515231A (en) * 1978-07-19 1980-02-02 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor device
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS58106865A (ja) 1983-06-25

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