JPS5799765A - Semiconductor resistance element - Google Patents
Semiconductor resistance elementInfo
- Publication number
- JPS5799765A JPS5799765A JP55175358A JP17535880A JPS5799765A JP S5799765 A JPS5799765 A JP S5799765A JP 55175358 A JP55175358 A JP 55175358A JP 17535880 A JP17535880 A JP 17535880A JP S5799765 A JPS5799765 A JP S5799765A
- Authority
- JP
- Japan
- Prior art keywords
- film
- poly
- electrode
- temperature
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66992—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by the variation of applied heat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175358A JPS5799765A (en) | 1980-12-12 | 1980-12-12 | Semiconductor resistance element |
US06/326,125 US4504743A (en) | 1980-12-12 | 1981-11-30 | Semiconductor resistor element |
DE8181401930T DE3176992D1 (en) | 1980-12-12 | 1981-12-04 | Semiconductor resistor element |
EP81401930A EP0054471B1 (en) | 1980-12-12 | 1981-12-04 | Semiconductor resistor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175358A JPS5799765A (en) | 1980-12-12 | 1980-12-12 | Semiconductor resistance element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5799765A true JPS5799765A (en) | 1982-06-21 |
Family
ID=15994671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55175358A Pending JPS5799765A (en) | 1980-12-12 | 1980-12-12 | Semiconductor resistance element |
Country Status (4)
Country | Link |
---|---|
US (1) | US4504743A (ja) |
EP (1) | EP0054471B1 (ja) |
JP (1) | JPS5799765A (ja) |
DE (1) | DE3176992D1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162181A (en) * | 1981-03-31 | 1982-10-05 | Fujitsu Ltd | Semiconductor memory device |
JPS5898895A (ja) * | 1981-12-08 | 1983-06-11 | Toshiba Corp | 半導体集積回路 |
JP2010179201A (ja) * | 2009-02-03 | 2010-08-19 | Kobelco Eco-Solutions Co Ltd | トロンメル式廃棄物選別装置及び廃棄物処理設備 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6422107A (en) * | 1987-07-17 | 1989-01-25 | Oki Electric Ind Co Ltd | Voltage level detecting circuit |
US5208488A (en) * | 1989-03-03 | 1993-05-04 | Kabushiki Kaisha Toshiba | Potential detecting circuit |
KR910007657B1 (ko) * | 1989-05-23 | 1991-09-30 | 삼성전자 주식회사 | 반도체 온도검출회로 |
JP3217498B2 (ja) * | 1992-10-29 | 2001-10-09 | 富士通株式会社 | 半導体集積回路装置 |
CA2093111C (en) * | 1993-03-31 | 1997-03-18 | Thomas W. Macelwee | High value resistive load for an integrated circuit |
JP3318105B2 (ja) * | 1993-08-17 | 2002-08-26 | 三菱電機株式会社 | 起動回路 |
JP3581459B2 (ja) * | 1995-10-24 | 2004-10-27 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP3625474B1 (ja) * | 2004-04-05 | 2005-03-02 | 富士通テン株式会社 | 接点腐食防止回路 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3056100A (en) * | 1959-12-04 | 1962-09-25 | Bell Telephone Labor Inc | Temperature compensated field effect resistor |
US3436689A (en) * | 1964-11-02 | 1969-04-01 | Us Navy | Field effect delay line |
DE2232274C2 (de) * | 1972-06-30 | 1982-05-06 | Ibm Deutschland Gmbh, 7000 Stuttgart | Statischer Halbleiterspeicher mit Feldeffekttransistoren |
GB1391959A (en) * | 1972-07-20 | 1975-04-23 | Ferranti Ltd | Semiconductor devices |
JPS5321992B2 (ja) * | 1973-10-17 | 1978-07-06 | ||
US4164668A (en) * | 1977-05-12 | 1979-08-14 | International Business Machines Corporation | Method of correcting the voltage coefficient of resistors implanted or diffused in a semiconductor substrate |
US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
US4229753A (en) * | 1977-08-18 | 1980-10-21 | International Business Machines Corporation | Voltage compensation of temperature coefficient of resistance in an integrated circuit resistor |
JPS5553452A (en) * | 1978-10-16 | 1980-04-18 | Hitachi Ltd | Semiconductor device |
US4260911A (en) * | 1979-02-26 | 1981-04-07 | Precision Monolithics, Inc. | Temperature compensated switching circuit and method |
US4272880A (en) * | 1979-04-20 | 1981-06-16 | Intel Corporation | MOS/SOS Process |
-
1980
- 1980-12-12 JP JP55175358A patent/JPS5799765A/ja active Pending
-
1981
- 1981-11-30 US US06/326,125 patent/US4504743A/en not_active Expired - Fee Related
- 1981-12-04 DE DE8181401930T patent/DE3176992D1/de not_active Expired
- 1981-12-04 EP EP81401930A patent/EP0054471B1/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162181A (en) * | 1981-03-31 | 1982-10-05 | Fujitsu Ltd | Semiconductor memory device |
JPH0241110B2 (ja) * | 1981-03-31 | 1990-09-14 | Fujitsu Ltd | |
JPS5898895A (ja) * | 1981-12-08 | 1983-06-11 | Toshiba Corp | 半導体集積回路 |
JPH0310196B2 (ja) * | 1981-12-08 | 1991-02-13 | Tokyo Shibaura Electric Co | |
JP2010179201A (ja) * | 2009-02-03 | 2010-08-19 | Kobelco Eco-Solutions Co Ltd | トロンメル式廃棄物選別装置及び廃棄物処理設備 |
Also Published As
Publication number | Publication date |
---|---|
EP0054471A3 (en) | 1984-07-18 |
EP0054471A2 (en) | 1982-06-23 |
EP0054471B1 (en) | 1989-02-22 |
US4504743A (en) | 1985-03-12 |
DE3176992D1 (en) | 1989-03-30 |
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