JPS5795625A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5795625A
JPS5795625A JP55171304A JP17130480A JPS5795625A JP S5795625 A JPS5795625 A JP S5795625A JP 55171304 A JP55171304 A JP 55171304A JP 17130480 A JP17130480 A JP 17130480A JP S5795625 A JPS5795625 A JP S5795625A
Authority
JP
Japan
Prior art keywords
substrate
film
sio
nitride
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55171304A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6227727B2 (en, 2012
Inventor
Jiro Oshima
Yutaka Etsuno
Takashi Yasujima
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55171304A priority Critical patent/JPS5795625A/ja
Priority to DE19813147535 priority patent/DE3147535A1/de
Priority to US06/327,190 priority patent/US4426234A/en
Publication of JPS5795625A publication Critical patent/JPS5795625A/ja
Publication of JPS6227727B2 publication Critical patent/JPS6227727B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/3115—Doping the insulating layers
    • H01L21/31155—Doping the insulating layers by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
JP55171304A 1980-12-04 1980-12-04 Manufacture of semiconductor device Granted JPS5795625A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55171304A JPS5795625A (en) 1980-12-04 1980-12-04 Manufacture of semiconductor device
DE19813147535 DE3147535A1 (de) 1980-12-04 1981-12-01 Verfahren zum herstellen einer halbleitervorrichtung
US06/327,190 US4426234A (en) 1980-12-04 1981-12-03 Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171304A JPS5795625A (en) 1980-12-04 1980-12-04 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5795625A true JPS5795625A (en) 1982-06-14
JPS6227727B2 JPS6227727B2 (en, 2012) 1987-06-16

Family

ID=15920793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171304A Granted JPS5795625A (en) 1980-12-04 1980-12-04 Manufacture of semiconductor device

Country Status (3)

Country Link
US (1) US4426234A (en, 2012)
JP (1) JPS5795625A (en, 2012)
DE (1) DE3147535A1 (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125823A (ja) * 1982-01-22 1983-07-27 Hitachi Ltd 半導体装置の製造方法
JPS63144517A (ja) * 1986-12-09 1988-06-16 Nec Corp 半導体装置の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
JPS5935425A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
JPS6393153A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置の製造方法
JPS6427458A (en) * 1987-07-22 1989-01-30 Cubic Eng Kk Healthy drink
US6352940B1 (en) * 1998-06-26 2002-03-05 Intel Corporation Semiconductor passivation deposition process for interfacial adhesion

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2427103A1 (de) * 1974-06-05 1975-12-18 Idn Invention Dev Novelties Behaelter zur aufbewahrung von magnetbandkassetten
DE2449688C3 (de) 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
JPS5950113B2 (ja) 1975-11-05 1984-12-06 株式会社東芝 半導体装置
US4063973A (en) 1975-11-10 1977-12-20 Tokyo Shibaura Electric Co., Ltd. Method of making a semiconductor device
JPS5272162A (en) * 1975-12-12 1977-06-16 Toshiba Corp Production of semiconductor device
US4102715A (en) 1975-12-19 1978-07-25 Matsushita Electric Industrial Co., Ltd. Method for diffusing an impurity into a semiconductor body
FR2417853A1 (fr) 1978-02-17 1979-09-14 Thomson Csf Procede de realisation d'un transistor de type mos et transistor realise selon ce procede
JPS5586151A (en) 1978-12-23 1980-06-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit
JPS55128828A (en) * 1979-03-28 1980-10-06 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125823A (ja) * 1982-01-22 1983-07-27 Hitachi Ltd 半導体装置の製造方法
JPS63144517A (ja) * 1986-12-09 1988-06-16 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US4426234A (en) 1984-01-17
DE3147535A1 (de) 1982-08-05
DE3147535C2 (en, 2012) 1988-07-28
JPS6227727B2 (en, 2012) 1987-06-16

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