JPS5778173A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5778173A
JPS5778173A JP15391780A JP15391780A JPS5778173A JP S5778173 A JPS5778173 A JP S5778173A JP 15391780 A JP15391780 A JP 15391780A JP 15391780 A JP15391780 A JP 15391780A JP S5778173 A JPS5778173 A JP S5778173A
Authority
JP
Japan
Prior art keywords
electrode
copper foil
film
electrode film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15391780A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0132670B2 (enExample
Inventor
Takayuki Wakui
Komei Yatsuno
Mamoru Sawahata
Tasao Soga
Michio Ogami
Tomiro Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15391780A priority Critical patent/JPS5778173A/ja
Priority to US06/315,905 priority patent/US4516149A/en
Priority to EP19810305142 priority patent/EP0051459B1/en
Priority to DE8181305142T priority patent/DE3173587D1/de
Publication of JPS5778173A publication Critical patent/JPS5778173A/ja
Publication of JPH0132670B2 publication Critical patent/JPH0132670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73269—Layer and TAB connectors
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP15391780A 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof Granted JPS5778173A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15391780A JPS5778173A (en) 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof
US06/315,905 US4516149A (en) 1980-11-04 1981-10-28 Semiconductor device having ribbon electrode structure and method for fabricating the same
EP19810305142 EP0051459B1 (en) 1980-11-04 1981-10-29 A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
DE8181305142T DE3173587D1 (en) 1980-11-04 1981-10-29 A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15391780A JPS5778173A (en) 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5778173A true JPS5778173A (en) 1982-05-15
JPH0132670B2 JPH0132670B2 (enExample) 1989-07-10

Family

ID=15572915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15391780A Granted JPS5778173A (en) 1980-11-04 1980-11-04 Semiconductor device and manufacture thereof

Country Status (4)

Country Link
US (1) US4516149A (enExample)
EP (1) EP0051459B1 (enExample)
JP (1) JPS5778173A (enExample)
DE (1) DE3173587D1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143865A (en) * 1988-09-02 1992-09-01 Kabushiki Kaisha Toshiba Metal bump type semiconductor device and method for manufacturing the same
US5436502A (en) * 1991-06-24 1995-07-25 Siemens Aktiengesellschaft Semiconductor component and method for the manufacturing thereof
JPH10233509A (ja) * 1997-02-12 1998-09-02 Motorola Semiconducteurs Sa 半導体パワー・デバイス

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3335836A1 (de) * 1983-10-01 1985-04-18 Brown, Boveri & Cie Ag, 6800 Mannheim Kontaktelektrode fuer leistungshalbleiterbauelement
JPS61218151A (ja) * 1985-03-23 1986-09-27 Hitachi Ltd 半導体装置
US4814855A (en) * 1986-04-29 1989-03-21 International Business Machines Corporation Balltape structure for tape automated bonding, multilayer packaging, universal chip interconnection and energy beam processes for manufacturing balltape
JPH0658959B2 (ja) * 1987-01-29 1994-08-03 富士電機株式会社 ゲ−ト・タ−ン・オフ・サイリスタ
EP0308667B1 (de) * 1987-09-23 1994-05-25 Siemens Aktiengesellschaft Absaugelektrode zur Verkürzung der Ausschaltzeit bei einem Halbleiterbauelement
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
EP0674380B1 (en) * 1994-03-24 1999-05-06 Fuji Electric Co. Ltd. Parallel connection structure for flat type semiconductor switches
US5670828A (en) * 1995-02-21 1997-09-23 Advanced Micro Devices, Inc. Tunneling technology for reducing intra-conductive layer capacitance
JPH09321175A (ja) * 1996-05-30 1997-12-12 Oki Electric Ind Co Ltd マイクロ波回路及びチップ
GB0318146D0 (en) * 2003-08-02 2003-09-03 Zetex Plc Bipolar transistor with a low saturation voltage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527573U (enExample) * 1975-07-01 1977-01-19
JPS5317274A (en) * 1976-08-02 1978-02-17 Hitachi Ltd Electrode structure of semiconductor element
JPS5512791A (en) * 1978-07-14 1980-01-29 Nec Corp Semiconductor device

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NL233303A (enExample) * 1957-11-30
DE1104618B (de) * 1959-09-23 1961-04-13 Siemens Ag Halbleiteranordnung mit einkristallinem Grundkoerper mit mindestens einem pn-UEbergang und mit mehreren Elektroden
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3689991A (en) * 1968-03-01 1972-09-12 Gen Electric A method of manufacturing a semiconductor device utilizing a flexible carrier
US3943546A (en) * 1968-08-01 1976-03-09 Telefunken Patentverwertungsgesellschaft M.B.H. Transistor
GB1237148A (en) * 1968-08-20 1971-06-30 Standard Telephones Cables Ltd Improvements in transistors
US3559002A (en) * 1968-12-09 1971-01-26 Gen Electric Semiconductor device with multiple shock absorbing and passivation layers
DE1816439C3 (de) * 1968-12-21 1978-04-20 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Leistungstransistor
US4028722A (en) * 1970-10-13 1977-06-07 Motorola, Inc. Contact bonded packaged integrated circuit
US3808474A (en) * 1970-10-29 1974-04-30 Texas Instruments Inc Semiconductor devices
US3900771A (en) * 1970-11-25 1975-08-19 Gerhard Krause Transistor with high current density
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US3781596A (en) * 1972-07-07 1973-12-25 R Galli Semiconductor chip carriers and strips thereof
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
JPS542077A (en) * 1977-06-08 1979-01-09 Hitachi Ltd Semiconductor switching element
US4240595A (en) * 1979-01-26 1980-12-23 National Tube & Reel Corporation End cap for cloth reel
JPS55115363A (en) * 1979-02-26 1980-09-05 Mitsubishi Electric Corp Semiconductor device
US4380042A (en) * 1981-02-23 1983-04-12 Angelucci Sr Thomas L Printed circuit lead carrier tape

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527573U (enExample) * 1975-07-01 1977-01-19
JPS5317274A (en) * 1976-08-02 1978-02-17 Hitachi Ltd Electrode structure of semiconductor element
JPS5512791A (en) * 1978-07-14 1980-01-29 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5143865A (en) * 1988-09-02 1992-09-01 Kabushiki Kaisha Toshiba Metal bump type semiconductor device and method for manufacturing the same
US5436502A (en) * 1991-06-24 1995-07-25 Siemens Aktiengesellschaft Semiconductor component and method for the manufacturing thereof
JPH10233509A (ja) * 1997-02-12 1998-09-02 Motorola Semiconducteurs Sa 半導体パワー・デバイス

Also Published As

Publication number Publication date
US4516149A (en) 1985-05-07
JPH0132670B2 (enExample) 1989-07-10
EP0051459B1 (en) 1986-01-22
EP0051459A2 (en) 1982-05-12
DE3173587D1 (en) 1986-03-06
EP0051459A3 (en) 1983-02-09

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