GB1237148A - Improvements in transistors - Google Patents

Improvements in transistors

Info

Publication number
GB1237148A
GB1237148A GB3981968A GB3981968A GB1237148A GB 1237148 A GB1237148 A GB 1237148A GB 3981968 A GB3981968 A GB 3981968A GB 3981968 A GB3981968 A GB 3981968A GB 1237148 A GB1237148 A GB 1237148A
Authority
GB
United Kingdom
Prior art keywords
emitter
contacts
emitter regions
type
windows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3981968A
Inventor
Paul Denham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3981968A priority Critical patent/GB1237148A/en
Publication of GB1237148A publication Critical patent/GB1237148A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,237,148. Transistors. STANDARD TELEPHONES & CABLES Ltd. 3 April, 1969 [20 Aug., 1968], No. 39819/68. Heading H1K. A transistor comprises a plurality of arrays of separate emitter regions each array being provided with a striplike emitter contact connected to a stabilizing resistor, and having striplike base contacts interdigitated with the emitter contacts. The transistor is produced by epitaxially depositing an N type Si collector region (2) on an N type substrate (3), masking with an oxide layer (11), forming a window (12) by a photolithographic technique, and diffusing-in B from the vapour phase to form a P type base region (4). The surface is remasked (13) and P is diffused from the vapour phase through windows (14) to produce an array of emitter regions 15. The oxide layer is reformed (16) and "Nichrome" (Registered Trade Mark) stabilizing resistors 10 are deposited by sublimation through a mask. A window 18 is formed over each of the emitter regions and windows 17 are formed to expose the base region (4) between each of the rows of emitter regions. A1 is then evaporated through a mask and alloyed to the Si to form base contacts 7 and emitter contacts 6.
GB3981968A 1968-08-20 1968-08-20 Improvements in transistors Expired GB1237148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3981968A GB1237148A (en) 1968-08-20 1968-08-20 Improvements in transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3981968A GB1237148A (en) 1968-08-20 1968-08-20 Improvements in transistors

Publications (1)

Publication Number Publication Date
GB1237148A true GB1237148A (en) 1971-06-30

Family

ID=10411679

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3981968A Expired GB1237148A (en) 1968-08-20 1968-08-20 Improvements in transistors

Country Status (1)

Country Link
GB (1) GB1237148A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251727A1 (en) * 1972-10-21 1974-04-25 Licentia Gmbh SEMICONDUCTOR ARRANGEMENT WITH AT LEAST TWO ZONES OPPOSING CONDUCTIVITY TYPES
EP0051459A2 (en) * 1980-11-04 1982-05-12 Hitachi, Ltd. A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
EP0212477A1 (en) * 1985-08-08 1987-03-04 Siemens Aktiengesellschaft Power transistor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2251727A1 (en) * 1972-10-21 1974-04-25 Licentia Gmbh SEMICONDUCTOR ARRANGEMENT WITH AT LEAST TWO ZONES OPPOSING CONDUCTIVITY TYPES
EP0051459A2 (en) * 1980-11-04 1982-05-12 Hitachi, Ltd. A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
EP0051459A3 (en) * 1980-11-04 1983-02-09 Hitachi, Ltd. A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
EP0212477A1 (en) * 1985-08-08 1987-03-04 Siemens Aktiengesellschaft Power transistor device

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