FR2068670A1 - Semiconductor device prodn - Google Patents

Semiconductor device prodn

Info

Publication number
FR2068670A1
FR2068670A1 FR7042563A FR7042563A FR2068670A1 FR 2068670 A1 FR2068670 A1 FR 2068670A1 FR 7042563 A FR7042563 A FR 7042563A FR 7042563 A FR7042563 A FR 7042563A FR 2068670 A1 FR2068670 A1 FR 2068670A1
Authority
FR
France
Prior art keywords
oxide layer
substrate
cavity
layer
prodn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7042563A
Other languages
French (fr)
Inventor
Stein Leonard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2068670A1 publication Critical patent/FR2068670A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)

Abstract

Monolithic semiconductor body contg. a number of separate, insulted semiconductor monocrystals of different and similar conductivity types is produced by (a) providing a monocrystalline silicon substrate with an upper surface coated by a first oxide layer, (b) forming in the substrate one or more insulation grooves extending through the first oxide layer to form a number of separate parts in the substrate, (c) coating the surfaces of the insulation grooves with a second oxide layer, (d) forming a cavity in at least one separate part extending through the first and the second oxide layer, (e) epitaxially depositing in this cavity a layer of monocrystalline semiconducting material with the opposite conductivity to that of the substrate material (f) coating the deposited material with a third oxide layer, (g) applying a layer of polycrystalline semiconducting material on the oxide layer, and (h) removing sufficient material from the bottom surface of the substrate to expose epitaxially deposited material in the bottom of each cavity, and also to expose the second oxide layer in the bottom of the insulation groove. Used in prodn of NPN and PNP Si transistors in a single Si platelet.
FR7042563A 1969-11-26 1970-11-26 Semiconductor device prodn Pending FR2068670A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88020369A 1969-11-26 1969-11-26

Publications (1)

Publication Number Publication Date
FR2068670A1 true FR2068670A1 (en) 1971-08-27

Family

ID=25375718

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7042563A Pending FR2068670A1 (en) 1969-11-26 1970-11-26 Semiconductor device prodn

Country Status (3)

Country Link
DE (1) DE2057895A1 (en)
FR (1) FR2068670A1 (en)
NL (1) NL7017085A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2194048A1 (en) * 1972-07-26 1974-02-22 Texas Instruments Inc
FR2465316A1 (en) * 1979-09-17 1981-03-20 Nippon Telegraph & Telephone SEMICONDUCTOR DEVICES HAVING COMPLEMENTARY SEMICONDUCTOR ELEMENTS AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2194048A1 (en) * 1972-07-26 1974-02-22 Texas Instruments Inc
FR2465316A1 (en) * 1979-09-17 1981-03-20 Nippon Telegraph & Telephone SEMICONDUCTOR DEVICES HAVING COMPLEMENTARY SEMICONDUCTOR ELEMENTS AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
NL7017085A (en) 1971-05-28
DE2057895A1 (en) 1971-06-24

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