JPS55166949A - Manufacture of thin film hybrid integrated circuit - Google Patents

Manufacture of thin film hybrid integrated circuit

Info

Publication number
JPS55166949A
JPS55166949A JP7528379A JP7528379A JPS55166949A JP S55166949 A JPS55166949 A JP S55166949A JP 7528379 A JP7528379 A JP 7528379A JP 7528379 A JP7528379 A JP 7528379A JP S55166949 A JPS55166949 A JP S55166949A
Authority
JP
Japan
Prior art keywords
film
layer
plating
molten
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7528379A
Other languages
Japanese (ja)
Inventor
Yoshinobu Mutsukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7528379A priority Critical patent/JPS55166949A/en
Publication of JPS55166949A publication Critical patent/JPS55166949A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE:To easily obtain an independent resistor in a thin film hybrid integrated circuit by degassing the resistance partly on the Ta-layer on an insulating substrate, selectively forming Au, Ni plating layers on Ni-Cr-layer and Au-layer, and then selectively melting the Au-layer, Ni plating layer, Ni-Cr-layer and Ta-layer. CONSTITUTION:A Ta film 2 is formed on the entire surface of an insulating substrate 1, a resist film 14 is coated on the portion except the degassed resistance surface to be anodized to form a resistors 2'. On the entire surface is coated an Ni-Cr film 15 and Au film 16, a resist film 17 is selectively formed thereon, and electrolytic Au plating layer 5 and an Ni plating film 18 are formed thereon. With the Ni plating film 18 as a mask, the Au film 16 is molten and removed, and the Ni film 18 is molten and removed. The exposed Au film 5 is used as a mask, the Ni-Cr film 15 is molten and removed, a resist layer 19 is coated on the Ta film becoming the resistor, and the exposed portion of the Ta film 2 is molten and removed. In this manner, the Ta film is etched as a final step so as to form an independent resistor without providing a shorting passage.
JP7528379A 1979-06-15 1979-06-15 Manufacture of thin film hybrid integrated circuit Pending JPS55166949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7528379A JPS55166949A (en) 1979-06-15 1979-06-15 Manufacture of thin film hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7528379A JPS55166949A (en) 1979-06-15 1979-06-15 Manufacture of thin film hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS55166949A true JPS55166949A (en) 1980-12-26

Family

ID=13571736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7528379A Pending JPS55166949A (en) 1979-06-15 1979-06-15 Manufacture of thin film hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS55166949A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284991A (en) * 1985-06-11 1986-12-15 電気化学工業株式会社 Circuit formation for aluminum/copper composite lined board
WO1989006086A1 (en) * 1987-12-18 1989-06-29 Mitsui Mining & Smelting Co., Ltd. Thin-film conductive circuit and process for its production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5375472A (en) * 1976-12-17 1978-07-04 Hitachi Ltd Method of producing thin film resistive ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5375472A (en) * 1976-12-17 1978-07-04 Hitachi Ltd Method of producing thin film resistive ic

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61284991A (en) * 1985-06-11 1986-12-15 電気化学工業株式会社 Circuit formation for aluminum/copper composite lined board
WO1989006086A1 (en) * 1987-12-18 1989-06-29 Mitsui Mining & Smelting Co., Ltd. Thin-film conductive circuit and process for its production
US5032694A (en) * 1987-12-18 1991-07-16 Mitsui Mining & Smelting Co., Ltd. Conductive film circuit and method of manufacturing the same

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