JPS5772346A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5772346A
JPS5772346A JP55148941A JP14894180A JPS5772346A JP S5772346 A JPS5772346 A JP S5772346A JP 55148941 A JP55148941 A JP 55148941A JP 14894180 A JP14894180 A JP 14894180A JP S5772346 A JPS5772346 A JP S5772346A
Authority
JP
Japan
Prior art keywords
film
depressions
entire surface
levelled
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55148941A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6250978B2 (enExample
Inventor
Akira Kurosawa
Takahiko Moriya
Riyouichi Hazuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55148941A priority Critical patent/JPS5772346A/ja
Publication of JPS5772346A publication Critical patent/JPS5772346A/ja
Publication of JPS6250978B2 publication Critical patent/JPS6250978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0148—
    • H10W10/17—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP55148941A 1980-10-24 1980-10-24 Manufacture of semiconductor device Granted JPS5772346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148941A JPS5772346A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148941A JPS5772346A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5772346A true JPS5772346A (en) 1982-05-06
JPS6250978B2 JPS6250978B2 (enExample) 1987-10-28

Family

ID=15464080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148941A Granted JPS5772346A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772346A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913334A (ja) * 1982-07-01 1984-01-24 コミツサレ・ア・レナジイ・アトミツク 集積回路の酸化膜生成方法
JPS6428925A (en) * 1987-07-24 1989-01-31 Semiconductor Energy Lab Formation of insulating film

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442163U (enExample) * 1987-09-09 1989-03-14
JP6498022B2 (ja) 2015-04-22 2019-04-10 東京エレクトロン株式会社 エッチング処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913334A (ja) * 1982-07-01 1984-01-24 コミツサレ・ア・レナジイ・アトミツク 集積回路の酸化膜生成方法
JPS6428925A (en) * 1987-07-24 1989-01-31 Semiconductor Energy Lab Formation of insulating film

Also Published As

Publication number Publication date
JPS6250978B2 (enExample) 1987-10-28

Similar Documents

Publication Publication Date Title
JPS57204133A (en) Manufacture of semiconductor integrated circuit
JPS5772346A (en) Manufacture of semiconductor device
JPS57204148A (en) Manufacture of semiconductor device
JPS56140641A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS643663A (en) Forming method for fine pattern
JPS5646531A (en) Manufacture of semiconductor device
JPS54124687A (en) Production of semiconductor device
JPS56130940A (en) Manufacture of semiconductor device
JPS5630739A (en) Formation of polycrystalline silicon wiring layer
JPS5633841A (en) Manufacture of semiconductor device
JPS55130140A (en) Fabricating method of semiconductor device
JPS5642346A (en) Manufacture of semiconductor device
JPS57176769A (en) Semiconductor device and manufacture thereof
JPS57157543A (en) Manufacture of semiconductor device
JPS5455378A (en) Production of semiconductor device
JPS5530844A (en) Semiconductor device and its manufacturing method
JPS5791537A (en) Manufacture of semiconductor device
JPS5478668A (en) Manufacture of semiconductor device
JPS5790940A (en) Manufacture of semiconductor device
JPS6477944A (en) Manufacture of semiconductor device
JPS5679446A (en) Production of semiconductor device
JPS57199231A (en) Manufacture of semiconductor device
JPS5762543A (en) Manufacture of semiconductor device
JPS55107244A (en) Manufacture of semiconductor device