JPS6250978B2 - - Google Patents

Info

Publication number
JPS6250978B2
JPS6250978B2 JP55148941A JP14894180A JPS6250978B2 JP S6250978 B2 JPS6250978 B2 JP S6250978B2 JP 55148941 A JP55148941 A JP 55148941A JP 14894180 A JP14894180 A JP 14894180A JP S6250978 B2 JPS6250978 B2 JP S6250978B2
Authority
JP
Japan
Prior art keywords
etching
oxide film
silicon nitride
film
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55148941A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5772346A (en
Inventor
Akira Kurosawa
Takahiko Morya
Ryoichi Hatsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55148941A priority Critical patent/JPS5772346A/ja
Publication of JPS5772346A publication Critical patent/JPS5772346A/ja
Publication of JPS6250978B2 publication Critical patent/JPS6250978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0148—
    • H10W10/17—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP55148941A 1980-10-24 1980-10-24 Manufacture of semiconductor device Granted JPS5772346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55148941A JPS5772346A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55148941A JPS5772346A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5772346A JPS5772346A (en) 1982-05-06
JPS6250978B2 true JPS6250978B2 (enExample) 1987-10-28

Family

ID=15464080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55148941A Granted JPS5772346A (en) 1980-10-24 1980-10-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772346A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442163U (enExample) * 1987-09-09 1989-03-14
EP3086359A1 (en) 2015-04-22 2016-10-26 Tokyo Electron Limited Etching method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2529714A1 (fr) * 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
JPS6428925A (en) * 1987-07-24 1989-01-31 Semiconductor Energy Lab Formation of insulating film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442163U (enExample) * 1987-09-09 1989-03-14
EP3086359A1 (en) 2015-04-22 2016-10-26 Tokyo Electron Limited Etching method
EP3621102A1 (en) 2015-04-22 2020-03-11 Tokyo Electron Limited Etching method

Also Published As

Publication number Publication date
JPS5772346A (en) 1982-05-06

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