JPS6250978B2 - - Google Patents
Info
- Publication number
- JPS6250978B2 JPS6250978B2 JP55148941A JP14894180A JPS6250978B2 JP S6250978 B2 JPS6250978 B2 JP S6250978B2 JP 55148941 A JP55148941 A JP 55148941A JP 14894180 A JP14894180 A JP 14894180A JP S6250978 B2 JPS6250978 B2 JP S6250978B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- oxide film
- silicon nitride
- film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
Landscapes
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55148941A JPS5772346A (en) | 1980-10-24 | 1980-10-24 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55148941A JPS5772346A (en) | 1980-10-24 | 1980-10-24 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5772346A JPS5772346A (en) | 1982-05-06 |
| JPS6250978B2 true JPS6250978B2 (enExample) | 1987-10-28 |
Family
ID=15464080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55148941A Granted JPS5772346A (en) | 1980-10-24 | 1980-10-24 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5772346A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442163U (enExample) * | 1987-09-09 | 1989-03-14 | ||
| EP3086359A1 (en) | 2015-04-22 | 2016-10-26 | Tokyo Electron Limited | Etching method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2529714A1 (fr) * | 1982-07-01 | 1984-01-06 | Commissariat Energie Atomique | Procede de realisation de l'oxyde de champ d'un circuit integre |
| JPS6428925A (en) * | 1987-07-24 | 1989-01-31 | Semiconductor Energy Lab | Formation of insulating film |
-
1980
- 1980-10-24 JP JP55148941A patent/JPS5772346A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6442163U (enExample) * | 1987-09-09 | 1989-03-14 | ||
| EP3086359A1 (en) | 2015-04-22 | 2016-10-26 | Tokyo Electron Limited | Etching method |
| EP3621102A1 (en) | 2015-04-22 | 2020-03-11 | Tokyo Electron Limited | Etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5772346A (en) | 1982-05-06 |
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