JPS5646581A - Formation of pattern of niobium film - Google Patents
Formation of pattern of niobium filmInfo
- Publication number
- JPS5646581A JPS5646581A JP12237479A JP12237479A JPS5646581A JP S5646581 A JPS5646581 A JP S5646581A JP 12237479 A JP12237479 A JP 12237479A JP 12237479 A JP12237479 A JP 12237479A JP S5646581 A JPS5646581 A JP S5646581A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- niobium
- retained
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052758 niobium Inorganic materials 0.000 title abstract 4
- 239000010955 niobium Substances 0.000 title abstract 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title abstract 4
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000010408 film Substances 0.000 abstract 14
- 230000000717 retained effect Effects 0.000 abstract 3
- 239000012212 insulator Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 150000002822 niobium compounds Chemical class 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Weting (AREA)
Abstract
PURPOSE:To obtain an accurate pattern of a niobium film used for a Josephson element by covering a mask on the film of the region retained and roughing the surface upon ion injection on the film of the region to be removed when forming the pattern at the niobium film. CONSTITUTION:A niobium film 2 is covered on a substrate 1 made of semiconductor becoming insulator at the operating temperature of an element of insulator or silicon such as glass, sapphire or the like, and a gold film 4 is formed in thin film thereon. Subsequently, a mask of a resist film 3 is formed corresponding to the region of the film 2 thus retained, and the film 4 of the region exposed by etching is removed. Thereafter, with the resist film 3 and the retained film 4 as masks ions 5 of oxygen or the like are implanted to form niobium compound to be readily etched on the whole surface, and the surface of the film 2 exposed is roughed. Thus, the region from which the film 2 is removed is made to be feasibly etched, and etchant is prevented from intruding into the lower portion of the masks, and the film 2 of unnecessary portion is removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12237479A JPS5646581A (en) | 1979-09-21 | 1979-09-21 | Formation of pattern of niobium film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12237479A JPS5646581A (en) | 1979-09-21 | 1979-09-21 | Formation of pattern of niobium film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5646581A true JPS5646581A (en) | 1981-04-27 |
Family
ID=14834257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12237479A Pending JPS5646581A (en) | 1979-09-21 | 1979-09-21 | Formation of pattern of niobium film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5646581A (en) |
-
1979
- 1979-09-21 JP JP12237479A patent/JPS5646581A/en active Pending
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