JPS57202742A - Glass for semiconductor coating - Google Patents
Glass for semiconductor coatingInfo
- Publication number
- JPS57202742A JPS57202742A JP56088411A JP8841181A JPS57202742A JP S57202742 A JPS57202742 A JP S57202742A JP 56088411 A JP56088411 A JP 56088411A JP 8841181 A JP8841181 A JP 8841181A JP S57202742 A JPS57202742 A JP S57202742A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- hard
- fluidity
- crystalline glass
- singularity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088411A JPS57202742A (en) | 1981-06-09 | 1981-06-09 | Glass for semiconductor coating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56088411A JPS57202742A (en) | 1981-06-09 | 1981-06-09 | Glass for semiconductor coating |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57202742A true JPS57202742A (en) | 1982-12-11 |
JPS6349897B2 JPS6349897B2 (ja) | 1988-10-06 |
Family
ID=13942050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56088411A Granted JPS57202742A (en) | 1981-06-09 | 1981-06-09 | Glass for semiconductor coating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57202742A (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012051761A (ja) * | 2010-09-01 | 2012-03-15 | Nippon Electric Glass Co Ltd | 半導体被覆用ガラス |
JP4927237B1 (ja) * | 2011-05-26 | 2012-05-09 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2012160962A1 (ja) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
WO2013030922A1 (ja) * | 2011-08-29 | 2013-03-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
JP2013060353A (ja) * | 2011-08-25 | 2013-04-04 | Nippon Electric Glass Co Ltd | 半導体素子被覆用ガラス |
JP5184717B1 (ja) * | 2012-01-31 | 2013-04-17 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
JP5340511B1 (ja) * | 2012-05-08 | 2013-11-13 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
WO2013168236A1 (ja) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
JP5655139B2 (ja) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
JP5655140B2 (ja) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
JP5827398B2 (ja) * | 2012-05-08 | 2015-12-02 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物の製造方法、半導体装置の製造方法及び半導体装置 |
JPWO2013168623A1 (ja) * | 2012-05-08 | 2016-01-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52134617A (en) * | 1976-05-06 | 1977-11-11 | Hitachi Ltd | Composite of glass for coating on semiconductor apparatus |
JPS5333578A (en) * | 1976-09-10 | 1978-03-29 | Hitachi Ltd | Glass composition for stabilizing semiconductor element surface |
-
1981
- 1981-06-09 JP JP56088411A patent/JPS57202742A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52134617A (en) * | 1976-05-06 | 1977-11-11 | Hitachi Ltd | Composite of glass for coating on semiconductor apparatus |
JPS5333578A (en) * | 1976-09-10 | 1978-03-29 | Hitachi Ltd | Glass composition for stabilizing semiconductor element surface |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012051761A (ja) * | 2010-09-01 | 2012-03-15 | Nippon Electric Glass Co Ltd | 半導体被覆用ガラス |
WO2012160961A1 (ja) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
JP5655140B2 (ja) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
WO2012160962A1 (ja) * | 2011-05-23 | 2012-11-29 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
JP5655139B2 (ja) * | 2011-05-23 | 2015-01-14 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
US9159549B2 (en) | 2011-05-26 | 2015-10-13 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
CN102781861A (zh) * | 2011-05-26 | 2012-11-14 | 新电元工业株式会社 | 半导体接合保护用玻璃合成物、半导体装置及其制造方法 |
US9941112B2 (en) | 2011-05-26 | 2018-04-10 | Shindengen Electric Manufacturing Co., Ltd | Method of manufacturing semiconductor device and semiconductor device |
JP4927237B1 (ja) * | 2011-05-26 | 2012-05-09 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
TWI424472B (zh) * | 2011-05-26 | 2014-01-21 | Shindengen Electric Mfg | Method for fabricating glass for semiconductor bonding, method for manufacturing semiconductor device, and semiconductor device |
WO2012160704A1 (ja) * | 2011-05-26 | 2012-11-29 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
JP2013060353A (ja) * | 2011-08-25 | 2013-04-04 | Nippon Electric Glass Co Ltd | 半導体素子被覆用ガラス |
WO2013030922A1 (ja) * | 2011-08-29 | 2013-03-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
US9006113B2 (en) | 2011-08-29 | 2015-04-14 | Shindengen Electric Manufacturing Co. Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
JP5548276B2 (ja) * | 2011-08-29 | 2014-07-16 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
JP5184717B1 (ja) * | 2012-01-31 | 2013-04-17 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
WO2013114562A1 (ja) * | 2012-01-31 | 2013-08-08 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
US9099483B2 (en) | 2012-01-31 | 2015-08-04 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
WO2013168314A1 (ja) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
CN103890935A (zh) * | 2012-05-08 | 2014-06-25 | 新电元工业株式会社 | 树脂封装型半导体装置及其制造方法 |
WO2013168521A1 (ja) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 樹脂封止型半導体装置及びその製造方法 |
WO2013168236A1 (ja) * | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
JP5827397B2 (ja) * | 2012-05-08 | 2015-12-02 | 新電元工業株式会社 | 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法 |
JP5827398B2 (ja) * | 2012-05-08 | 2015-12-02 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物の製造方法、半導体装置の製造方法及び半導体装置 |
JPWO2013168623A1 (ja) * | 2012-05-08 | 2016-01-07 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
US9455231B2 (en) | 2012-05-08 | 2016-09-27 | Shindengen Electric Manufacturing Co., Ltd. | Resin-sealed semiconductor device and method of manufacturing the same |
CN103890935B (zh) * | 2012-05-08 | 2016-10-26 | 新电元工业株式会社 | 树脂封装型半导体装置及其制造方法 |
US9570408B2 (en) | 2012-05-08 | 2017-02-14 | Shindengen Electric Manufacturing Co., Ltd. | Resin-sealed semiconductor device and method of manufacturing resin-sealed semiconductor device |
US9698069B2 (en) | 2012-05-08 | 2017-07-04 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
JP5340511B1 (ja) * | 2012-05-08 | 2013-11-13 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6349897B2 (ja) | 1988-10-06 |
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