GB959294A - Improvements in or relating to growth methods for single crystals of zinc oxide - Google Patents

Improvements in or relating to growth methods for single crystals of zinc oxide

Info

Publication number
GB959294A
GB959294A GB1707/61A GB170761A GB959294A GB 959294 A GB959294 A GB 959294A GB 1707/61 A GB1707/61 A GB 1707/61A GB 170761 A GB170761 A GB 170761A GB 959294 A GB959294 A GB 959294A
Authority
GB
United Kingdom
Prior art keywords
zinc oxide
range
temperature
lead fluoride
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1707/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB959294A publication Critical patent/GB959294A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12—Salt solvents, e.g. flux growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials

Abstract

Hexagonal plate-like zinc oxide crystals are grown by dissolving zinc oxide in a solvent consisting substantially wholly of lead fluoride by heating to a temperature within the range 1030 DEG to 1300 DEG C., the amount of zinc oxide introduced being sufficient to produce saturation of the lead fluoride at a temperature within said range, and cooling the resultant solution to cause growth of the crystals, cooling of the solution within the range 1300 DEG to 1030 DEG C. being at a maximum rate of 5 degrees per hour. Baths containing 1% or greater of impurities such as iron, cobalt, nickel, manganese, copper or lithium, do not affect the crystal habit, but antimony, bismuth and arsenic should be avoided. The amounts of zinc oxide and lead fluoride to be used are dependent upon the desired temperature of initial nucleation; from the graph the maximum amounts of zinc oxide tolerable for given maximum temperatures can <PICT:0959294/C1/1> be obtained. The preferred flux composition corresponds with saturation over the range 1030 DEG to 1300 DEG C. (from 21 to 48 mol. per cent zinc oxide based on the entire bath). The initial ingredients, i.e. ZnO and PbF2, are placed in a crucible which is then covered and heated in a furnace to the desired temperature in the range 1030 DEG to 1300 DEG C., a partially sealed system being used. The contents are allowed to cool at a maximum rate of 5 DEG C. per hour until a temperature of 1030 DEG C. is reached when the entire flux is quenched by removing the crucible from the furnace and allowing the contents to cool to room temperature. Alternatively, on termination of crystallization at 1030 DEG C., the liquid flux may be removed by pouring. Specification 959,293 is referred to.
GB1707/61A 1960-04-07 1961-01-16 Improvements in or relating to growth methods for single crystals of zinc oxide Expired GB959294A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20643A US3043671A (en) 1960-04-07 1960-04-07 Zinc oxide crystal growth method

Publications (1)

Publication Number Publication Date
GB959294A true GB959294A (en) 1964-05-27

Family

ID=21799778

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1707/61A Expired GB959294A (en) 1960-04-07 1961-01-16 Improvements in or relating to growth methods for single crystals of zinc oxide

Country Status (2)

Country Link
US (1) US3043671A (en)
GB (1) GB959294A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1266982A2 (en) * 2001-06-12 2002-12-18 National Institute of Advanced Industrial Science and Technology Method for production of zinc oxide single crystal
CN100360720C (en) * 2006-03-24 2008-01-09 中国科学院上海硅酸盐研究所 Method for growth of zinc oxide monocrystal by falling aerated crucible method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102251281B (en) * 2006-03-01 2013-01-16 三菱瓦斯化学株式会社 Process for producing Zno single crystal according to method of liquid phase growth

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1266982A2 (en) * 2001-06-12 2002-12-18 National Institute of Advanced Industrial Science and Technology Method for production of zinc oxide single crystal
EP1266982A3 (en) * 2001-06-12 2006-07-05 National Institute of Advanced Industrial Science and Technology Method for production of zinc oxide single crystal
CN100360720C (en) * 2006-03-24 2008-01-09 中国科学院上海硅酸盐研究所 Method for growth of zinc oxide monocrystal by falling aerated crucible method

Also Published As

Publication number Publication date
US3043671A (en) 1962-07-10

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