GB962732A - Improvements in or relating to the growth of single crystals of corundum and gallium oxide - Google Patents

Improvements in or relating to the growth of single crystals of corundum and gallium oxide

Info

Publication number
GB962732A
GB962732A GB18159/61A GB1815961A GB962732A GB 962732 A GB962732 A GB 962732A GB 18159/61 A GB18159/61 A GB 18159/61A GB 1815961 A GB1815961 A GB 1815961A GB 962732 A GB962732 A GB 962732A
Authority
GB
United Kingdom
Prior art keywords
pts
pbo
al2o3
crystals
gallium oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18159/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB962732A publication Critical patent/GB962732A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12—Salt solvents, e.g. flux growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Single crystals of alumina or gallium oxide are grown by cooling a melt of the said material admixed with PbO and B2O3. The crystal habit, rhombohedral or hexagonal plates, may be varied by adjustment of the composition of the PbO/B2O3 flux, the proportion of alumina or gallium oxide in the melt, and the temperature at which nucleation is allowed to take place. Cr2O3, Co2O3, Fe2O3 may be incorporated in the melt to produce synthetic garnets for maser applications. Rhombohedral crystals are grown by allowing nucleation to take place at 1300 DEG C. in a mixture consisting by weight of 0.5-4 pts. B2O3, 50 pts. PbO and 6.7-6.85 pts. Al2O3 the preferred proportions being 1 pt. B2O3, 50 pts. PbO and 6.7 to 6.85 pts. Al2O3, 50 pts. PbO and 6.7 to 6.85 pts. Al2O3. Hexagonal crystals are obtained over the composition range 3 to 5 pts. B2O3, 50 pts. PbO, 7.2 to 7.4 pts. Al2O, the preferred range being 4 pts. B2O3 50 pts. PbO, 7.3 pts. Al2O3, the nucleating temperature of 1225-1250 DEG C. being employed. Thus in Example 1 a mixture of 1 g. B2O3, 50 g. PbO 6.80 g. Al2O3 were heated in a Pt crucible to 1300 DEG C. and maintained at that temperature for 8 hours. The crucible was allowed to cool at 2 DEG C. per hour to 915 DEG C., whereupon the liquid contents were poured away and the solid remaining was allowed to reach room temperature. The solid crystals were treated with dilute HNO3 to effect removal of residual flux, yielding rhombohedral transparent crystals. In Example 2 a mixture of 4 g. B2O3, 50 g. PbO and 7.30 g. Al2O3 were subjected to the above procedure to yield Al2O3 in the hexagonal habit. Other examples refer to the production of coloured garnets by additives of Cr2O3, Co2O3, Fe2O3 and the gallium oxide crystallization process.
GB18159/61A 1960-05-24 1961-05-18 Improvements in or relating to the growth of single crystals of corundum and gallium oxide Expired GB962732A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31356A US3075831A (en) 1960-05-24 1960-05-24 Growth of single crystals of corundum and gallium oxide

Publications (1)

Publication Number Publication Date
GB962732A true GB962732A (en) 1964-07-01

Family

ID=21858992

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18159/61A Expired GB962732A (en) 1960-05-24 1961-05-18 Improvements in or relating to the growth of single crystals of corundum and gallium oxide

Country Status (3)

Country Link
US (1) US3075831A (en)
BE (1) BE603988A (en)
GB (1) GB962732A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL290591A (en) * 1962-03-29 1900-01-01
US4096025A (en) * 1974-02-21 1978-06-20 The United States Of America As Represented By The Secretary Of The Army Method of orienting seed crystals in a melt, and product obtained thereby
JPS5532021B2 (en) * 1974-10-26 1980-08-22
CN114574965B (en) * 2022-05-06 2022-08-16 中国电子科技集团公司第四十六研究所 Raw material doping method for changing flowability of gallium oxide melt

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2957827A (en) * 1957-04-30 1960-10-25 Bell Telephone Labor Inc Method of making single crystal garnets
US2979413A (en) * 1957-06-14 1961-04-11 Bell Telephone Labor Inc Method of growing corundum crystals
US3011870A (en) * 1958-09-05 1961-12-05 Union Carbide Corp Process for preparing virtually perfect alumina crystals
US3011868A (en) * 1959-09-15 1961-12-05 Robert E Moore Method of making synthetic mica

Also Published As

Publication number Publication date
BE603988A (en) 1961-09-18
US3075831A (en) 1963-01-29

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