JPS57132387A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS57132387A JPS57132387A JP1792681A JP1792681A JPS57132387A JP S57132387 A JPS57132387 A JP S57132387A JP 1792681 A JP1792681 A JP 1792681A JP 1792681 A JP1792681 A JP 1792681A JP S57132387 A JPS57132387 A JP S57132387A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- clad layer
- substrate
- semiconductor
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1792681A JPS57132387A (en) | 1981-02-09 | 1981-02-09 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1792681A JPS57132387A (en) | 1981-02-09 | 1981-02-09 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57132387A true JPS57132387A (en) | 1982-08-16 |
JPH0358191B2 JPH0358191B2 (ko) | 1991-09-04 |
Family
ID=11957368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1792681A Granted JPS57132387A (en) | 1981-02-09 | 1981-02-09 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57132387A (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57198689A (en) * | 1981-05-30 | 1982-12-06 | Matsushita Electric Ind Co Ltd | Semiconductor device |
DE3728568A1 (de) * | 1987-08-27 | 1989-03-16 | Telefunken Electronic Gmbh | Halbleiterlaseranordnung |
US10833476B2 (en) * | 2016-12-22 | 2020-11-10 | Osram Oled Gmbh | Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51138394A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor device |
JPS51138393A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor light emission device |
JPS55126680U (ko) * | 1979-03-05 | 1980-09-08 | ||
JPS55117295A (en) * | 1979-03-02 | 1980-09-09 | Hitachi Ltd | Semiconductor light emitting element and fabricating the same |
-
1981
- 1981-02-09 JP JP1792681A patent/JPS57132387A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51138394A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor device |
JPS51138393A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor light emission device |
JPS55117295A (en) * | 1979-03-02 | 1980-09-09 | Hitachi Ltd | Semiconductor light emitting element and fabricating the same |
JPS55126680U (ko) * | 1979-03-05 | 1980-09-08 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57198689A (en) * | 1981-05-30 | 1982-12-06 | Matsushita Electric Ind Co Ltd | Semiconductor device |
DE3728568A1 (de) * | 1987-08-27 | 1989-03-16 | Telefunken Electronic Gmbh | Halbleiterlaseranordnung |
US10833476B2 (en) * | 2016-12-22 | 2020-11-10 | Osram Oled Gmbh | Surface-mountable semiconductor laser, arrangement with such a semiconductor laser and operating method for same |
Also Published As
Publication number | Publication date |
---|---|
JPH0358191B2 (ko) | 1991-09-04 |
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