JPH0358191B2 - - Google Patents
Info
- Publication number
- JPH0358191B2 JPH0358191B2 JP56017926A JP1792681A JPH0358191B2 JP H0358191 B2 JPH0358191 B2 JP H0358191B2 JP 56017926 A JP56017926 A JP 56017926A JP 1792681 A JP1792681 A JP 1792681A JP H0358191 B2 JPH0358191 B2 JP H0358191B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- semi
- insulating substrate
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 171
- 239000000758 substrate Substances 0.000 claims description 49
- 238000005253 cladding Methods 0.000 claims description 28
- 230000001568 sexual effect Effects 0.000 claims 1
- 230000005669 field effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1792681A JPS57132387A (en) | 1981-02-09 | 1981-02-09 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1792681A JPS57132387A (en) | 1981-02-09 | 1981-02-09 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57132387A JPS57132387A (en) | 1982-08-16 |
JPH0358191B2 true JPH0358191B2 (ko) | 1991-09-04 |
Family
ID=11957368
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1792681A Granted JPS57132387A (en) | 1981-02-09 | 1981-02-09 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57132387A (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57198689A (en) * | 1981-05-30 | 1982-12-06 | Matsushita Electric Ind Co Ltd | Semiconductor device |
DE3728568A1 (de) * | 1987-08-27 | 1989-03-16 | Telefunken Electronic Gmbh | Halbleiterlaseranordnung |
DE102016125430A1 (de) * | 2016-12-22 | 2018-06-28 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51138394A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor device |
JPS51138393A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor light emission device |
JPS55117295A (en) * | 1979-03-02 | 1980-09-09 | Hitachi Ltd | Semiconductor light emitting element and fabricating the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55126680U (ko) * | 1979-03-05 | 1980-09-08 |
-
1981
- 1981-02-09 JP JP1792681A patent/JPS57132387A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51138394A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor device |
JPS51138393A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Semiconductor light emission device |
JPS55117295A (en) * | 1979-03-02 | 1980-09-09 | Hitachi Ltd | Semiconductor light emitting element and fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
JPS57132387A (en) | 1982-08-16 |
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