JPS51138393A - Semiconductor light emission device - Google Patents
Semiconductor light emission deviceInfo
- Publication number
- JPS51138393A JPS51138393A JP6271175A JP6271175A JPS51138393A JP S51138393 A JPS51138393 A JP S51138393A JP 6271175 A JP6271175 A JP 6271175A JP 6271175 A JP6271175 A JP 6271175A JP S51138393 A JPS51138393 A JP S51138393A
- Authority
- JP
- Japan
- Prior art keywords
- light emission
- semiconductor light
- emission device
- junction
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To enable the connection to the electrodes without application of pressure to a double hetero-junction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6271175A JPS51138393A (en) | 1975-05-26 | 1975-05-26 | Semiconductor light emission device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6271175A JPS51138393A (en) | 1975-05-26 | 1975-05-26 | Semiconductor light emission device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51138393A true JPS51138393A (en) | 1976-11-29 |
Family
ID=13208169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6271175A Pending JPS51138393A (en) | 1975-05-26 | 1975-05-26 | Semiconductor light emission device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51138393A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
JPS57132387A (en) * | 1981-02-09 | 1982-08-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
EP0547281A1 (en) * | 1991-12-17 | 1993-06-23 | International Business Machines Corporation | Recessed ridge diode structure |
EP0513905B1 (en) * | 1991-05-16 | 1996-03-13 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing such a device |
-
1975
- 1975-05-26 JP JP6271175A patent/JPS51138393A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
JPS5755309B2 (en) * | 1977-07-12 | 1982-11-24 | ||
JPS57132387A (en) * | 1981-02-09 | 1982-08-16 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPH0358191B2 (en) * | 1981-02-09 | 1991-09-04 | Nippon Telegraph & Telephone | |
EP0513905B1 (en) * | 1991-05-16 | 1996-03-13 | Koninklijke Philips Electronics N.V. | Semiconductor device and method of manufacturing such a device |
EP0547281A1 (en) * | 1991-12-17 | 1993-06-23 | International Business Machines Corporation | Recessed ridge diode structure |
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