JPS5224477A - Variable impedance element - Google Patents

Variable impedance element

Info

Publication number
JPS5224477A
JPS5224477A JP10084675A JP10084675A JPS5224477A JP S5224477 A JPS5224477 A JP S5224477A JP 10084675 A JP10084675 A JP 10084675A JP 10084675 A JP10084675 A JP 10084675A JP S5224477 A JPS5224477 A JP S5224477A
Authority
JP
Japan
Prior art keywords
impedance element
variable impedance
fet
give
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10084675A
Other languages
Japanese (ja)
Other versions
JPS5410432B2 (en
Inventor
Takeshi Kimura
Michihiro Inoue
Masaharu Sato
Shiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10084675A priority Critical patent/JPS5224477A/en
Priority to GB41859/75A priority patent/GB1527773A/en
Priority to US05/621,839 priority patent/US4025940A/en
Priority to DE2546609A priority patent/DE2546609C3/en
Priority to IT51832/75A priority patent/IT1056151B/en
Priority to FR7532007A priority patent/FR2288397A1/en
Publication of JPS5224477A publication Critical patent/JPS5224477A/en
Publication of JPS5410432B2 publication Critical patent/JPS5410432B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface

Abstract

PURPOSE:Give sustaining function to a variable impedance element using FET.
JP10084675A 1974-10-18 1975-08-19 Variable impedance element Granted JPS5224477A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP10084675A JPS5224477A (en) 1975-08-19 1975-08-19 Variable impedance element
GB41859/75A GB1527773A (en) 1974-10-18 1975-10-13 Mos type semiconductor device
US05/621,839 US4025940A (en) 1974-10-18 1975-10-14 MOS type semiconductor device
DE2546609A DE2546609C3 (en) 1974-10-18 1975-10-17 MOS field effect transistor
IT51832/75A IT1056151B (en) 1974-10-18 1975-10-17 IMPROVEMENT IN MOS TYPE SEMICONDUCTOR DEVICES
FR7532007A FR2288397A1 (en) 1974-10-18 1975-10-20 SEMICONDUCTOR MOS TYPE DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10084675A JPS5224477A (en) 1975-08-19 1975-08-19 Variable impedance element

Publications (2)

Publication Number Publication Date
JPS5224477A true JPS5224477A (en) 1977-02-23
JPS5410432B2 JPS5410432B2 (en) 1979-05-07

Family

ID=14284671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10084675A Granted JPS5224477A (en) 1974-10-18 1975-08-19 Variable impedance element

Country Status (1)

Country Link
JP (1) JPS5224477A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538206A (en) * 1978-08-25 1980-03-17 Tokan Kogyo Co Ltd Easy*unsealing cover body and its preparation
JPS55129627U (en) * 1979-03-05 1980-09-12
JPS6023154A (en) * 1983-07-11 1985-02-05 昭和電工株式会社 Easy-open vessel cover
JPH02109848A (en) * 1988-10-17 1990-04-23 Showa Denko Kk Easy opening lid made of plastic and its manufacture

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538206A (en) * 1978-08-25 1980-03-17 Tokan Kogyo Co Ltd Easy*unsealing cover body and its preparation
JPS6246425B2 (en) * 1978-08-25 1987-10-02 Tokan Kogyo Co Ltd
JPS55129627U (en) * 1979-03-05 1980-09-12
JPS6023154A (en) * 1983-07-11 1985-02-05 昭和電工株式会社 Easy-open vessel cover
JPH02109848A (en) * 1988-10-17 1990-04-23 Showa Denko Kk Easy opening lid made of plastic and its manufacture

Also Published As

Publication number Publication date
JPS5410432B2 (en) 1979-05-07

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