JPS57120369A - Gate enhanced rectifier - Google Patents

Gate enhanced rectifier

Info

Publication number
JPS57120369A
JPS57120369A JP56190983A JP19098381A JPS57120369A JP S57120369 A JPS57120369 A JP S57120369A JP 56190983 A JP56190983 A JP 56190983A JP 19098381 A JP19098381 A JP 19098381A JP S57120369 A JPS57120369 A JP S57120369A
Authority
JP
Japan
Prior art keywords
gate enhanced
rectifier
enhanced rectifier
gate
enhanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56190983A
Other languages
English (en)
Inventor
Jiyayanto Bariga Bantobaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS57120369A publication Critical patent/JPS57120369A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56190983A 1980-12-02 1981-11-30 Gate enhanced rectifier Pending JPS57120369A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21218180A 1980-12-02 1980-12-02

Publications (1)

Publication Number Publication Date
JPS57120369A true JPS57120369A (en) 1982-07-27

Family

ID=22789906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56190983A Pending JPS57120369A (en) 1980-12-02 1981-11-30 Gate enhanced rectifier

Country Status (8)

Country Link
JP (1) JPS57120369A (ja)
CH (1) CH657230A5 (ja)
DE (1) DE3147075A1 (ja)
FR (1) FR2495382B1 (ja)
GB (1) GB2088631B (ja)
IE (1) IE52758B1 (ja)
MX (1) MX151412A (ja)
SE (1) SE8107136L (ja)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594077A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 電界効果トランジスタ
JPS59155169A (ja) * 1983-02-04 1984-09-04 ゼネラル・エレクトリック・カンパニイ Ｉｇｆｅｔ／絶縁ゲート・トリガー・サイリスタ混成電力スイッチング半導体デバイス
JPS59211271A (ja) * 1983-05-17 1984-11-30 Toshiba Corp 半導体装置
JPS605568A (ja) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd 縦型絶縁ゲ−ト電界効果トランジスタ
JPS60140876A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 半導体装置
JPS60174258U (ja) * 1983-12-22 1985-11-19 株式会社明電舎 電界制御型半導体素子
JPS61185971A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 伝導度変調型半導体装置
JPS6248072A (ja) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp 半導体装置
JPS6248073A (ja) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp 半導体装置
JPS62126668A (ja) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp 半導体装置
JPS63310171A (ja) * 1987-06-12 1988-12-19 Hitachi Ltd 複合半導体装置
JPS6457674A (en) * 1987-02-26 1989-03-03 Toshiba Corp Conductivity-modulation mosfet
JPH01196874A (ja) * 1988-02-02 1989-08-08 Nippon Denso Co Ltd 絶縁ゲート型半導体装置
JPH0472670A (ja) * 1990-05-07 1992-03-06 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
US5124772A (en) * 1989-09-11 1992-06-23 Kabushiki Kaisha Toshiba Insulated gate bipolar transistor with a shortened carrier lifetime region
US5331184A (en) * 1991-08-12 1994-07-19 Kabushiki Kaisha Toshiba Insulated gate bipolar transistor having high breakdown voltage
US5444271A (en) * 1992-08-15 1995-08-22 Kabushiki Kaisha Toshiba Conductivity-modulated semiconductor device with high breakdown voltage

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212173A (ja) * 1982-04-01 1983-12-09 株式会社東芝 制御装置を備えたバイポ−ラ・トランジスタ装置
DE3380136D1 (en) * 1982-04-12 1989-08-03 Gen Electric Semiconductor device having a diffused region of reduced length and method of fabricating the same
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
EP0273030A3 (en) * 1982-12-13 1988-09-21 General Electric Company Lateral insulated-gate rectifier structures
EP0144654A3 (en) * 1983-11-03 1987-10-07 General Electric Company Semiconductor device structure including a dielectrically-isolated insulated-gate transistor
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
JPH0618255B2 (ja) * 1984-04-04 1994-03-09 株式会社東芝 半導体装置
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61191071A (ja) * 1985-02-20 1986-08-25 Toshiba Corp 伝導度変調型半導体装置及びその製造方法
EP0199293B2 (en) * 1985-04-24 1995-08-30 General Electric Company Insulated gate semiconductor device
DE3628857A1 (de) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp Halbleitereinrichtung
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
EP0330122B1 (de) * 1988-02-24 1995-10-25 Siemens Aktiengesellschaft Verfahren zur Herstellung eines durch Feldeffekt steuerbaren Bipolartransistors
JPH07120799B2 (ja) * 1988-04-01 1995-12-20 株式会社日立製作所 半導体装置
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法
EP0409010A1 (de) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Abschaltbares Leistungshalbleiterbauelement
GB8921596D0 (en) * 1989-09-25 1989-11-08 Lucas Ind Plc Mos gated bipolar devices
DE3942490C2 (de) * 1989-12-22 1994-03-24 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
DE69133562D1 (de) * 1990-10-31 2007-04-12 Monodor Sa Vorrichtung und kartusche zum bereiten eines flüssigen produkts

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150870A (en) * 1980-03-25 1981-11-21 Rca Corp Vertical mos-fet device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040657C3 (de) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150870A (en) * 1980-03-25 1981-11-21 Rca Corp Vertical mos-fet device

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594077A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 電界効果トランジスタ
JPS59155169A (ja) * 1983-02-04 1984-09-04 ゼネラル・エレクトリック・カンパニイ Ｉｇｆｅｔ／絶縁ゲート・トリガー・サイリスタ混成電力スイッチング半導体デバイス
JPH043113B2 (ja) * 1983-02-04 1992-01-22
JPS59211271A (ja) * 1983-05-17 1984-11-30 Toshiba Corp 半導体装置
JPS605568A (ja) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd 縦型絶縁ゲ−ト電界効果トランジスタ
JPH0465552B2 (ja) * 1983-06-23 1992-10-20 Sanken Electric Co Ltd
JPS60174258U (ja) * 1983-12-22 1985-11-19 株式会社明電舎 電界制御型半導体素子
JPH0810763B2 (ja) * 1983-12-28 1996-01-31 株式会社日立製作所 半導体装置
JPS60140876A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 半導体装置
JPS61185971A (ja) * 1985-02-14 1986-08-19 Toshiba Corp 伝導度変調型半導体装置
JPH0466111B2 (ja) * 1985-02-14 1992-10-22 Tokyo Shibaura Electric Co
JPS6248073A (ja) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp 半導体装置
JPS6248072A (ja) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp 半導体装置
JPH0551188B2 (ja) * 1985-08-27 1993-07-30 Mitsubishi Electric Corp
JPS62126668A (ja) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp 半導体装置
JPS6457674A (en) * 1987-02-26 1989-03-03 Toshiba Corp Conductivity-modulation mosfet
JPS63310171A (ja) * 1987-06-12 1988-12-19 Hitachi Ltd 複合半導体装置
JPH01196874A (ja) * 1988-02-02 1989-08-08 Nippon Denso Co Ltd 絶縁ゲート型半導体装置
US5124772A (en) * 1989-09-11 1992-06-23 Kabushiki Kaisha Toshiba Insulated gate bipolar transistor with a shortened carrier lifetime region
JPH0472670A (ja) * 1990-05-07 1992-03-06 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
US5331184A (en) * 1991-08-12 1994-07-19 Kabushiki Kaisha Toshiba Insulated gate bipolar transistor having high breakdown voltage
US5444271A (en) * 1992-08-15 1995-08-22 Kabushiki Kaisha Toshiba Conductivity-modulated semiconductor device with high breakdown voltage

Also Published As

Publication number Publication date
FR2495382A1 (fr) 1982-06-04
GB2088631B (en) 1984-11-28
IE812693L (en) 1982-06-02
CH657230A5 (de) 1986-08-15
SE8107136L (sv) 1982-06-03
DE3147075A1 (de) 1982-07-01
IE52758B1 (en) 1988-02-17
MX151412A (es) 1984-11-14
GB2088631A (en) 1982-06-09
FR2495382B1 (fr) 1988-04-29

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