IE812693L - Gate enhanced rectifier - Google Patents

Gate enhanced rectifier

Info

Publication number
IE812693L
IE812693L IE812693A IE269381A IE812693L IE 812693 L IE812693 L IE 812693L IE 812693 A IE812693 A IE 812693A IE 269381 A IE269381 A IE 269381A IE 812693 L IE812693 L IE 812693L
Authority
IE
Ireland
Prior art keywords
rectifier
gate
gate enhanced
gb2088631a
insulator
Prior art date
Application number
IE812693A
Other versions
IE52758B1 (en
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of IE812693L publication Critical patent/IE812693L/en
Publication of IE52758B1 publication Critical patent/IE52758B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

A high power field effect controlled semiconductor rectifier is constructed so that the rectifier is normally off and can be switched on by applying a bias signal to a gate 68 of a metal-insulator-semiconductor structure monolithically integrated with the rectifier in such a manner as to induce a contacting channel including inversion layer 78 and accumulation layer 79, between the anode 62 and cathode 70 of the rectifier. The device has both forward and reverse blocking capability and a low forward voltage drop when in the conducting state. The device has a very high turn-off gain and both high dV/dt and di/dt capabilities. <IMAGE> [GB2088631A]
IE2693/81A 1980-12-02 1981-11-17 Gate enhanced rectifier IE52758B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21218180A 1980-12-02 1980-12-02

Publications (2)

Publication Number Publication Date
IE812693L true IE812693L (en) 1982-06-02
IE52758B1 IE52758B1 (en) 1988-02-17

Family

ID=22789906

Family Applications (1)

Application Number Title Priority Date Filing Date
IE2693/81A IE52758B1 (en) 1980-12-02 1981-11-17 Gate enhanced rectifier

Country Status (8)

Country Link
JP (1) JPS57120369A (en)
CH (1) CH657230A5 (en)
DE (1) DE3147075A1 (en)
FR (1) FR2495382B1 (en)
GB (1) GB2088631B (en)
IE (1) IE52758B1 (en)
MX (1) MX151412A (en)
SE (1) SE8107136L (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2524710B1 (en) * 1982-04-01 1986-03-14 Gen Electric SEMICONDUCTOR SWITCHING DEVICE
DE3380136D1 (en) * 1982-04-12 1989-08-03 Gen Electric Semiconductor device having a diffused region of reduced length and method of fabricating the same
JPS594077A (en) * 1982-06-30 1984-01-10 Toshiba Corp Field-effect transistor
JPS5927569A (en) * 1982-08-06 1984-02-14 Hitachi Ltd Semiconductor switch element
EP0111803B1 (en) * 1982-12-13 1989-03-01 General Electric Company Lateral insulated-gate rectifier structures
CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
DE3482354D1 (en) * 1983-02-04 1990-06-28 Gen Electric ELECTRICAL CIRCUIT CONTAINING A HYBRID POWER SWITCH SEMICONDUCTOR ARRANGEMENT WITH SCR STRUCTURE.
JPS59211271A (en) * 1983-05-17 1984-11-30 Toshiba Corp Semiconductor device
JPS605568A (en) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd Vertical insulated gate field effect transistor
EP0144654A3 (en) * 1983-11-03 1987-10-07 General Electric Company Semiconductor device structure including a dielectrically-isolated insulated-gate transistor
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
JPS60174258U (en) * 1983-12-22 1985-11-19 株式会社明電舎 Electric field controlled semiconductor device
JPH0810763B2 (en) * 1983-12-28 1996-01-31 株式会社日立製作所 Semiconductor device
JPH0618255B2 (en) * 1984-04-04 1994-03-09 株式会社東芝 Semiconductor device
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61185971A (en) * 1985-02-14 1986-08-19 Toshiba Corp Conductivity modulation type semiconductor device
JPS61191071A (en) * 1985-02-20 1986-08-25 Toshiba Corp Conductivity modulation type semiconductor device and manufacture thereof
DE3677627D1 (en) * 1985-04-24 1991-04-04 Gen Electric SEMICONDUCTOR ARRANGEMENT WITH INSULATED GATE.
DE3628857A1 (en) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE
JPH0715998B2 (en) * 1985-08-27 1995-02-22 三菱電機株式会社 Semiconductor device
JPS6248073A (en) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp Semiconductor device
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
JPS62126668A (en) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp Semiconductor device
JPH0821713B2 (en) * 1987-02-26 1996-03-04 株式会社東芝 Conduction modulation type MOSFET
JPH0624244B2 (en) * 1987-06-12 1994-03-30 株式会社日立製作所 Composite semiconductor device
JP2576173B2 (en) * 1988-02-02 1997-01-29 日本電装株式会社 Insulated gate semiconductor device
JPH0648729B2 (en) * 1988-02-24 1994-06-22 シーメンス、アクチエンゲゼルシシヤフト Bipolar transistor with controllable field effect
JPH07120799B2 (en) * 1988-04-01 1995-12-20 株式会社日立製作所 Semiconductor device
JPH0247874A (en) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Manufacture of mos semiconductor device
EP0409010A1 (en) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Switchable semiconductor power device
JP2752184B2 (en) * 1989-09-11 1998-05-18 株式会社東芝 Power semiconductor device
GB8921596D0 (en) * 1989-09-25 1989-11-08 Lucas Ind Plc Mos gated bipolar devices
DE3942490C2 (en) * 1989-12-22 1994-03-24 Daimler Benz Ag Field effect controlled semiconductor device
JP2808882B2 (en) * 1990-05-07 1998-10-08 富士電機株式会社 Insulated gate bipolar transistor
EP0507905B8 (en) * 1990-10-31 2007-04-18 Monodor S.A. Apparatus and pouch for preparing a liquid product
JPH0548111A (en) * 1991-08-12 1993-02-26 Toshiba Corp Semiconductor device and its manufacture
JP2984478B2 (en) * 1992-08-15 1999-11-29 株式会社東芝 Conductivity modulation type semiconductor device and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040657C3 (en) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Electronic switch for semiconductor crosspoints in telecommunications, in particular telephone switching systems
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region

Also Published As

Publication number Publication date
DE3147075A1 (en) 1982-07-01
GB2088631A (en) 1982-06-09
FR2495382A1 (en) 1982-06-04
FR2495382B1 (en) 1988-04-29
GB2088631B (en) 1984-11-28
JPS57120369A (en) 1982-07-27
MX151412A (en) 1984-11-14
IE52758B1 (en) 1988-02-17
SE8107136L (en) 1982-06-03
CH657230A5 (en) 1986-08-15

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