MX151412A - AN IMPROVED GATE REINFORCED RECTIFIER - Google Patents
AN IMPROVED GATE REINFORCED RECTIFIERInfo
- Publication number
- MX151412A MX151412A MX190377A MX19037781A MX151412A MX 151412 A MX151412 A MX 151412A MX 190377 A MX190377 A MX 190377A MX 19037781 A MX19037781 A MX 19037781A MX 151412 A MX151412 A MX 151412A
- Authority
- MX
- Mexico
- Prior art keywords
- rectifier
- improved gate
- gate reinforced
- reinforced
- improved
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21218180A | 1980-12-02 | 1980-12-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX151412A true MX151412A (en) | 1984-11-14 |
Family
ID=22789906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX190377A MX151412A (en) | 1980-12-02 | 1981-12-02 | AN IMPROVED GATE REINFORCED RECTIFIER |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS57120369A (en) |
| CH (1) | CH657230A5 (en) |
| DE (1) | DE3147075A1 (en) |
| FR (1) | FR2495382B1 (en) |
| GB (1) | GB2088631B (en) |
| IE (1) | IE52758B1 (en) |
| MX (1) | MX151412A (en) |
| SE (1) | SE8107136L (en) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58212173A (en) * | 1982-04-01 | 1983-12-09 | 株式会社東芝 | Bipolar transistor device with controller |
| DE3380136D1 (en) * | 1982-04-12 | 1989-08-03 | Gen Electric | Semiconductor device having a diffused region of reduced length and method of fabricating the same |
| JPS594077A (en) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | Field-effect transistor |
| JPS5927569A (en) * | 1982-08-06 | 1984-02-14 | Hitachi Ltd | Semiconductor switch element |
| EP0273030A3 (en) * | 1982-12-13 | 1988-09-21 | General Electric Company | Lateral insulated-gate rectifier structures |
| CA1200322A (en) * | 1982-12-13 | 1986-02-04 | General Electric Company | Bidirectional insulated-gate rectifier structures and method of operation |
| EP0118007B1 (en) * | 1983-02-04 | 1990-05-23 | General Electric Company | Electrical circuit comprising a hybrid power switching semiconductor device including an scr structure |
| JPS59211271A (en) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | Semiconductor device |
| JPS605568A (en) * | 1983-06-23 | 1985-01-12 | Sanken Electric Co Ltd | Vertical insulated gate field effect transistor |
| EP0144654A3 (en) * | 1983-11-03 | 1987-10-07 | General Electric Company | Semiconductor device structure including a dielectrically-isolated insulated-gate transistor |
| US4618872A (en) * | 1983-12-05 | 1986-10-21 | General Electric Company | Integrated power switching semiconductor devices including IGT and MOSFET structures |
| JPS60174258U (en) * | 1983-12-22 | 1985-11-19 | 株式会社明電舎 | Electric field controlled semiconductor device |
| JPH0810763B2 (en) * | 1983-12-28 | 1996-01-31 | 株式会社日立製作所 | Semiconductor device |
| JPH0618255B2 (en) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | Semiconductor device |
| US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
| JPS61185971A (en) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | Conductivity modulation type semiconductor device |
| JPS61191071A (en) * | 1985-02-20 | 1986-08-25 | Toshiba Corp | Conductivity modulation type semiconductor device and manufacture thereof |
| DE3677627D1 (en) * | 1985-04-24 | 1991-04-04 | Gen Electric | SEMICONDUCTOR ARRANGEMENT WITH INSULATED GATE. |
| DE3628857A1 (en) * | 1985-08-27 | 1987-03-12 | Mitsubishi Electric Corp | SEMICONDUCTOR DEVICE |
| JPS6248073A (en) * | 1985-08-27 | 1987-03-02 | Mitsubishi Electric Corp | Semiconductor device |
| JPH0715998B2 (en) * | 1985-08-27 | 1995-02-22 | 三菱電機株式会社 | Semiconductor device |
| US4809045A (en) * | 1985-09-30 | 1989-02-28 | General Electric Company | Insulated gate device |
| JPS62126668A (en) * | 1985-11-27 | 1987-06-08 | Mitsubishi Electric Corp | Semiconductor device |
| JPH0821713B2 (en) * | 1987-02-26 | 1996-03-04 | 株式会社東芝 | Conduction modulation type MOSFET |
| JPH0624244B2 (en) * | 1987-06-12 | 1994-03-30 | 株式会社日立製作所 | Composite semiconductor device |
| JP2576173B2 (en) * | 1988-02-02 | 1997-01-29 | 日本電装株式会社 | Insulated gate semiconductor device |
| DE58909474D1 (en) * | 1988-02-24 | 1995-11-30 | Siemens Ag | Method for producing a bipolar transistor which can be controlled by a field effect. |
| JPH07120799B2 (en) * | 1988-04-01 | 1995-12-20 | 株式会社日立製作所 | Semiconductor device |
| JPH0247874A (en) * | 1988-08-10 | 1990-02-16 | Fuji Electric Co Ltd | Manufacture of mos semiconductor device |
| EP0409010A1 (en) * | 1989-07-19 | 1991-01-23 | Asea Brown Boveri Ag | Switchable semiconductor power device |
| JP2752184B2 (en) * | 1989-09-11 | 1998-05-18 | 株式会社東芝 | Power semiconductor device |
| GB8921596D0 (en) * | 1989-09-25 | 1989-11-08 | Lucas Ind Plc | Mos gated bipolar devices |
| DE3942490C2 (en) * | 1989-12-22 | 1994-03-24 | Daimler Benz Ag | Field effect controlled semiconductor device |
| JP2808882B2 (en) * | 1990-05-07 | 1998-10-08 | 富士電機株式会社 | Insulated gate bipolar transistor |
| AU650064B2 (en) * | 1990-10-31 | 1994-06-09 | Monodor S.A. | Method for preparing a liquid product and device for implementing same |
| JPH0548111A (en) * | 1991-08-12 | 1993-02-26 | Toshiba Corp | Semiconductor device and its manufacture |
| JP2984478B2 (en) * | 1992-08-15 | 1999-11-29 | 株式会社東芝 | Conductivity modulation type semiconductor device and method of manufacturing the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2040657C3 (en) * | 1970-08-17 | 1975-10-02 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Electronic switch for semiconductor crosspoints in telecommunications, in particular telephone switching systems |
| US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
-
1981
- 1981-04-01 SE SE8107136A patent/SE8107136L/en not_active Application Discontinuation
- 1981-11-17 IE IE2693/81A patent/IE52758B1/en unknown
- 1981-11-24 GB GB8135419A patent/GB2088631B/en not_active Expired
- 1981-11-27 CH CH7616/81A patent/CH657230A5/en not_active IP Right Cessation
- 1981-11-27 DE DE19813147075 patent/DE3147075A1/en not_active Withdrawn
- 1981-11-30 JP JP56190983A patent/JPS57120369A/en active Pending
- 1981-12-01 FR FR8122488A patent/FR2495382B1/en not_active Expired
- 1981-12-02 MX MX190377A patent/MX151412A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IE52758B1 (en) | 1988-02-17 |
| IE812693L (en) | 1982-06-02 |
| DE3147075A1 (en) | 1982-07-01 |
| FR2495382A1 (en) | 1982-06-04 |
| GB2088631B (en) | 1984-11-28 |
| JPS57120369A (en) | 1982-07-27 |
| GB2088631A (en) | 1982-06-09 |
| CH657230A5 (en) | 1986-08-15 |
| SE8107136L (en) | 1982-06-03 |
| FR2495382B1 (en) | 1988-04-29 |
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