GB2088631B - Field effect controlled semiconductor rectifier - Google Patents

Field effect controlled semiconductor rectifier

Info

Publication number
GB2088631B
GB2088631B GB8135419A GB8135419A GB2088631B GB 2088631 B GB2088631 B GB 2088631B GB 8135419 A GB8135419 A GB 8135419A GB 8135419 A GB8135419 A GB 8135419A GB 2088631 B GB2088631 B GB 2088631B
Authority
GB
United Kingdom
Prior art keywords
field effect
controlled semiconductor
semiconductor rectifier
effect controlled
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8135419A
Other versions
GB2088631A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB2088631A publication Critical patent/GB2088631A/en
Application granted granted Critical
Publication of GB2088631B publication Critical patent/GB2088631B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
GB8135419A 1980-12-02 1981-11-24 Field effect controlled semiconductor rectifier Expired GB2088631B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21218180A 1980-12-02 1980-12-02

Publications (2)

Publication Number Publication Date
GB2088631A GB2088631A (en) 1982-06-09
GB2088631B true GB2088631B (en) 1984-11-28

Family

ID=22789906

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8135419A Expired GB2088631B (en) 1980-12-02 1981-11-24 Field effect controlled semiconductor rectifier

Country Status (8)

Country Link
JP (1) JPS57120369A (en)
CH (1) CH657230A5 (en)
DE (1) DE3147075A1 (en)
FR (1) FR2495382B1 (en)
GB (1) GB2088631B (en)
IE (1) IE52758B1 (en)
MX (1) MX151412A (en)
SE (1) SE8107136L (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212173A (en) * 1982-04-01 1983-12-09 株式会社東芝 Bipolar transistor device with controller
EP0091686B1 (en) * 1982-04-12 1989-06-28 General Electric Company Semiconductor device having a diffused region of reduced length and method of fabricating the same
JPS594077A (en) * 1982-06-30 1984-01-10 Toshiba Corp Field-effect transistor
JPS5927569A (en) * 1982-08-06 1984-02-14 Hitachi Ltd Semiconductor switch element
CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
EP0273030A3 (en) * 1982-12-13 1988-09-21 General Electric Company Lateral insulated-gate rectifier structures
EP0118007B1 (en) * 1983-02-04 1990-05-23 General Electric Company Electrical circuit comprising a hybrid power switching semiconductor device including an scr structure
JPS59211271A (en) * 1983-05-17 1984-11-30 Toshiba Corp Semiconductor device
JPS605568A (en) * 1983-06-23 1985-01-12 Sanken Electric Co Ltd Vertical insulated gate field effect transistor
EP0144654A3 (en) * 1983-11-03 1987-10-07 General Electric Company Semiconductor device structure including a dielectrically-isolated insulated-gate transistor
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
JPS60174258U (en) * 1983-12-22 1985-11-19 株式会社明電舎 Electric field controlled semiconductor device
JPH0810763B2 (en) * 1983-12-28 1996-01-31 株式会社日立製作所 Semiconductor device
JPH0618255B2 (en) * 1984-04-04 1994-03-09 株式会社東芝 Semiconductor device
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
JPS61185971A (en) * 1985-02-14 1986-08-19 Toshiba Corp Conductivity modulation type semiconductor device
JPS61191071A (en) * 1985-02-20 1986-08-25 Toshiba Corp Conductivity modulation type semiconductor device and manufacture thereof
EP0199293B2 (en) * 1985-04-24 1995-08-30 General Electric Company Insulated gate semiconductor device
JPS6248073A (en) * 1985-08-27 1987-03-02 Mitsubishi Electric Corp Semiconductor device
DE3628857A1 (en) * 1985-08-27 1987-03-12 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE
JPH0715998B2 (en) * 1985-08-27 1995-02-22 三菱電機株式会社 Semiconductor device
US4809045A (en) * 1985-09-30 1989-02-28 General Electric Company Insulated gate device
JPS62126668A (en) * 1985-11-27 1987-06-08 Mitsubishi Electric Corp Semiconductor device
JPH0821713B2 (en) * 1987-02-26 1996-03-04 株式会社東芝 Conduction modulation type MOSFET
JPH0624244B2 (en) * 1987-06-12 1994-03-30 株式会社日立製作所 Composite semiconductor device
JP2576173B2 (en) * 1988-02-02 1997-01-29 日本電装株式会社 Insulated gate semiconductor device
EP0330122B1 (en) * 1988-02-24 1995-10-25 Siemens Aktiengesellschaft Method of manufacturing a field-effect-controllable bipolar transistor
JPH07120799B2 (en) * 1988-04-01 1995-12-20 株式会社日立製作所 Semiconductor device
JPH0247874A (en) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Manufacture of mos semiconductor device
EP0409010A1 (en) * 1989-07-19 1991-01-23 Asea Brown Boveri Ag Switchable semiconductor power device
JP2752184B2 (en) * 1989-09-11 1998-05-18 株式会社東芝 Power semiconductor device
GB8921596D0 (en) * 1989-09-25 1989-11-08 Lucas Ind Plc Mos gated bipolar devices
DE3942490C2 (en) * 1989-12-22 1994-03-24 Daimler Benz Ag Field effect controlled semiconductor device
JP2808882B2 (en) * 1990-05-07 1998-10-08 富士電機株式会社 Insulated gate bipolar transistor
PT99373B (en) * 1990-10-31 1999-07-30 Coffea Sa A tank cartridge comprising a plurality of substances for the preparation of a liquid product, as well as a collection liquid for the liquid product, and a puncturing liquid and liquid injector for said cartridge
JPH0548111A (en) * 1991-08-12 1993-02-26 Toshiba Corp Semiconductor device and its manufacture
JP2984478B2 (en) * 1992-08-15 1999-11-29 株式会社東芝 Conductivity modulation type semiconductor device and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040657C3 (en) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Electronic switch for semiconductor crosspoints in telecommunications, in particular telephone switching systems
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region

Also Published As

Publication number Publication date
FR2495382B1 (en) 1988-04-29
GB2088631A (en) 1982-06-09
IE812693L (en) 1982-06-02
DE3147075A1 (en) 1982-07-01
SE8107136L (en) 1982-06-03
FR2495382A1 (en) 1982-06-04
IE52758B1 (en) 1988-02-17
CH657230A5 (en) 1986-08-15
MX151412A (en) 1984-11-14
JPS57120369A (en) 1982-07-27

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee